Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2 V-1 s-1

Yongsuk Choi, Hyunwoo Kim, Jeehye Yang, Seung Won Shin, Soong Ho Um, Sungjoo Lee, Moon Sung Kang, Jeong Ho Cho

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17 Citations (Scopus)

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