Proton irradiation energy dependence of defect formation in graphene

Sanggeun Lee; Jungmok Seo; Juree Hong; Seul Hyun Park; Joo Hee Lee; Byung Wook Min; Taeyoon Lee

doi:10.1016/j.apsusc.2015.03.107

Proton irradiation energy dependence of defect formation in graphene

Sanggeun Lee, Jungmok Seo, Juree Hong, Seul Hyun Park, Joo Hee Lee, Byung Wook Min, Taeyoon Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Graphene transistors on SiO ₂ /Si were irradiated with 5, 10, and 15 MeV protons at a dose rate of 2 × 10 ¹⁴ cm ^-2 . The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10 MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15 MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15 MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results.

Original language	English
Pages (from-to)	52-56
Number of pages	5
Journal	Applied Surface Science
Volume	344
DOIs	https://doi.org/10.1016/j.apsusc.2015.03.107
Publication status	Published - 2015 Jul 30

Bibliographical note

Funding Information:
This work was supported by the Korea Aerospace Research Institute (KARI)-University partnership program and by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2012-0006689 ). This research was also supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2011-0028594 ) and by the IT R&D program of MOTIE/KEIT [ 10040052 , Development of X-ray Detector Sensor and ROIC on Photon Counting Method for 16bit High Resolution Dynamic Image Processing]. This work was also supported by the Industrial Strategic Technology Development program (10041041, Development of Non-vacuum and Non-lithography Based 5 μm Width Cu Interconnect Technology for TFT Backplane) funded by the Ministry of Knowledge Economy (MKE, Korea).

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2015.03.107

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title = "Proton irradiation energy dependence of defect formation in graphene",

abstract = " Graphene transistors on SiO 2 /Si were irradiated with 5, 10, and 15 MeV protons at a dose rate of 2 × 10 14 cm -2 . The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10 MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15 MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15 MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results.",

author = "Sanggeun Lee and Jungmok Seo and Juree Hong and Park, {Seul Hyun} and Lee, {Joo Hee} and Min, {Byung Wook} and Taeyoon Lee",

note = "Funding Information: This work was supported by the Korea Aerospace Research Institute (KARI)-University partnership program and by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2012-0006689 ). This research was also supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2011-0028594 ) and by the IT R&D program of MOTIE/KEIT [ 10040052 , Development of X-ray Detector Sensor and ROIC on Photon Counting Method for 16bit High Resolution Dynamic Image Processing]. This work was also supported by the Industrial Strategic Technology Development program (10041041, Development of Non-vacuum and Non-lithography Based 5 μm Width Cu Interconnect Technology for TFT Backplane) funded by the Ministry of Knowledge Economy (MKE, Korea). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

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AU - Lee, Sanggeun

AU - Seo, Jungmok

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AU - Park, Seul Hyun

AU - Lee, Joo Hee

AU - Min, Byung Wook

AU - Lee, Taeyoon

N1 - Funding Information: This work was supported by the Korea Aerospace Research Institute (KARI)-University partnership program and by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2012-0006689 ). This research was also supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2011-0028594 ) and by the IT R&D program of MOTIE/KEIT [ 10040052 , Development of X-ray Detector Sensor and ROIC on Photon Counting Method for 16bit High Resolution Dynamic Image Processing]. This work was also supported by the Industrial Strategic Technology Development program (10041041, Development of Non-vacuum and Non-lithography Based 5 μm Width Cu Interconnect Technology for TFT Backplane) funded by the Ministry of Knowledge Economy (MKE, Korea). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/7/30

Y1 - 2015/7/30

N2 - Graphene transistors on SiO 2 /Si were irradiated with 5, 10, and 15 MeV protons at a dose rate of 2 × 10 14 cm -2 . The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10 MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15 MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15 MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results.

AB - Graphene transistors on SiO 2 /Si were irradiated with 5, 10, and 15 MeV protons at a dose rate of 2 × 10 14 cm -2 . The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10 MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15 MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15 MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results.

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Proton irradiation energy dependence of defect formation in graphene

Abstract

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