Proton irradiation energy dependence of defect formation in graphene

Sanggeun Lee, Jungmok Seo, Juree Hong, Seul Hyun Park, Joo Hee Lee, Byung-Wook Min, Taeyoon Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Graphene transistors on SiO 2 /Si were irradiated with 5, 10, and 15 MeV protons at a dose rate of 2 × 10 14 cm -2 . The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10 MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15 MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15 MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results.

Original languageEnglish
Pages (from-to)52-56
Number of pages5
JournalApplied Surface Science
Volume344
DOIs
Publication statusPublished - 2015 Jul 30

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Proton irradiation
Graphite
Graphene
Defects
Drain current
Raman spectroscopy
Protons
Raman scattering
Irradiation
Ions

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Lee, Sanggeun ; Seo, Jungmok ; Hong, Juree ; Park, Seul Hyun ; Lee, Joo Hee ; Min, Byung-Wook ; Lee, Taeyoon. / Proton irradiation energy dependence of defect formation in graphene. In: Applied Surface Science. 2015 ; Vol. 344. pp. 52-56.
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Proton irradiation energy dependence of defect formation in graphene. / Lee, Sanggeun; Seo, Jungmok; Hong, Juree; Park, Seul Hyun; Lee, Joo Hee; Min, Byung-Wook; Lee, Taeyoon.

In: Applied Surface Science, Vol. 344, 30.07.2015, p. 52-56.

Research output: Contribution to journalArticle

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AU - Lee, Sanggeun

AU - Seo, Jungmok

AU - Hong, Juree

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AU - Lee, Taeyoon

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