Proton irradiation energy dependence of defect formation in graphene

Sanggeun Lee, Jungmok Seo, Juree Hong, Seul Hyun Park, Joo Hee Lee, Byung Wook Min, Taeyoon Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)


Graphene transistors on SiO 2 /Si were irradiated with 5, 10, and 15 MeV protons at a dose rate of 2 × 10 14 cm -2 . The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10 MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15 MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15 MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results.

Original languageEnglish
Pages (from-to)52-56
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 2015 Jul 30

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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