Pseudo NMOS based sense amplifier for high speed single-ended SRAM

Hanwool Jeong, Taewon Kim, Seong Ook Jung, Taejoong Song, Gyuhong Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Pseudo nMOS based sense amplifier (PNSA) is proposed for high speed single-ended SRAM sensing. The voltage characteristic of pseudo nMOS is utilized to resolve the performance problem of the conventional domino sensing due to full swing bit-line requirement. Increase in dynamic power due to always-on pull-up pMOS in the pseudo nMOS structure is mitigated by introducing a feedback path. As a result, with less than 40% power overhead, the PNSA shows approximate twice better performance compared to the conventional domino sensing scheme.

Original languageEnglish
Title of host publication2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages331-334
Number of pages4
ISBN (Electronic)9781479942428
DOIs
Publication statusPublished - 2015 Feb 25
Event2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 - Marseille, France
Duration: 2014 Dec 72014 Dec 10

Other

Other2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
CountryFrance
CityMarseille
Period14/12/714/12/10

Fingerprint

Static random access storage
Feedback
Electric potential

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Jeong, H., Kim, T., Jung, S. O., Song, T., & Kim, G. (2015). Pseudo NMOS based sense amplifier for high speed single-ended SRAM. In 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 (pp. 331-334). [7049989] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.2014.7049989
Jeong, Hanwool ; Kim, Taewon ; Jung, Seong Ook ; Song, Taejoong ; Kim, Gyuhong. / Pseudo NMOS based sense amplifier for high speed single-ended SRAM. 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 331-334
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abstract = "Pseudo nMOS based sense amplifier (PNSA) is proposed for high speed single-ended SRAM sensing. The voltage characteristic of pseudo nMOS is utilized to resolve the performance problem of the conventional domino sensing due to full swing bit-line requirement. Increase in dynamic power due to always-on pull-up pMOS in the pseudo nMOS structure is mitigated by introducing a feedback path. As a result, with less than 40{\%} power overhead, the PNSA shows approximate twice better performance compared to the conventional domino sensing scheme.",
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Jeong, H, Kim, T, Jung, SO, Song, T & Kim, G 2015, Pseudo NMOS based sense amplifier for high speed single-ended SRAM. in 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014., 7049989, Institute of Electrical and Electronics Engineers Inc., pp. 331-334, 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014, Marseille, France, 14/12/7. https://doi.org/10.1109/ICECS.2014.7049989

Pseudo NMOS based sense amplifier for high speed single-ended SRAM. / Jeong, Hanwool; Kim, Taewon; Jung, Seong Ook; Song, Taejoong; Kim, Gyuhong.

2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. p. 331-334 7049989.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Jeong, Hanwool

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AU - Song, Taejoong

AU - Kim, Gyuhong

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N2 - Pseudo nMOS based sense amplifier (PNSA) is proposed for high speed single-ended SRAM sensing. The voltage characteristic of pseudo nMOS is utilized to resolve the performance problem of the conventional domino sensing due to full swing bit-line requirement. Increase in dynamic power due to always-on pull-up pMOS in the pseudo nMOS structure is mitigated by introducing a feedback path. As a result, with less than 40% power overhead, the PNSA shows approximate twice better performance compared to the conventional domino sensing scheme.

AB - Pseudo nMOS based sense amplifier (PNSA) is proposed for high speed single-ended SRAM sensing. The voltage characteristic of pseudo nMOS is utilized to resolve the performance problem of the conventional domino sensing due to full swing bit-line requirement. Increase in dynamic power due to always-on pull-up pMOS in the pseudo nMOS structure is mitigated by introducing a feedback path. As a result, with less than 40% power overhead, the PNSA shows approximate twice better performance compared to the conventional domino sensing scheme.

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Jeong H, Kim T, Jung SO, Song T, Kim G. Pseudo NMOS based sense amplifier for high speed single-ended SRAM. In 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014. Institute of Electrical and Electronics Engineers Inc. 2015. p. 331-334. 7049989 https://doi.org/10.1109/ICECS.2014.7049989