Pulsed chemical vapor deposition of tungsten (W) thin film as a nucleation layer for W-plug fill of sub-100 nm dynamic random access memory technology

Soo Hyun Kim, Eui Sung Hwang, Tae Su Park, Nohjung Kawk, Seung Ho Pyi, Jun Ki Kim, Hyunchul Sohn

Research output: Contribution to journalConference article

Abstract

Tungsten (W) thin film was deposited using pulsed chemical vapor deposition (pulsed CVD) and evaluated as a nucleation layer for W-plug deposition at the contact with an ultrahigh aspect ratio (contact height: 3.51 μm and aspect ratio: 13.7-14.9) for sub-100 nm dynamic random access memory technology (DRAM). The deposition stage for pulsed CVD-W film is composed of 4 sequential steps, resulting one deposition cycle; (1) Reaction of tungsten hexafluoride (WF 6 ) with silane (SiH 4 ) (2) Inert gas purge (3) SiH 4 exposure (4) Inert gas purge while the deposition of conventional CVD-W nucleation is based on the simultaneous flow of SiH 4 and WF 6 . W growth per cycle was extremely linear with growth rate of -1.32 -1.5 nm/cycle at 400°C. W film deposited by pulsed CVD showed a better conformality at the contact holes with an aspect ratio of ∼14 as compared to W film deposited by conventional CVD. It was found that a resistivity of pulsed CVD-W film was closely related with its phase (body centered cubic α-W or primitive cubic β-W) and microstructure characterized by grain size as well as impurity content. The integration results showed that a lower contact resistance was obtained when pulsed CVD-W film was used as a nucleation layer even though pulsed CVD-W film has a higher film resistivity (∼100 mΩ-cm) compared to conventional CVD-W nucleation layer (∼25 μΩ-cm). It was found that a lower contact resistance of pulsed CVD-W based plug fill scheme was mainly due to its better plug filling capability.

Original languageEnglish
Pages (from-to)749-755
Number of pages7
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2004 Dec 1
EventAdvanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States
Duration: 2004 Oct 192004 Oct 21

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Tungsten
Chemical vapor deposition
Nucleation
Data storage equipment
Thin films
Noble Gases
Aspect ratio
Contact resistance
Inert gases
Silanes
Impurities
Microstructure

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cite this

@article{a020746431bc4573806fd77d24bf092c,
title = "Pulsed chemical vapor deposition of tungsten (W) thin film as a nucleation layer for W-plug fill of sub-100 nm dynamic random access memory technology",
abstract = "Tungsten (W) thin film was deposited using pulsed chemical vapor deposition (pulsed CVD) and evaluated as a nucleation layer for W-plug deposition at the contact with an ultrahigh aspect ratio (contact height: 3.51 μm and aspect ratio: 13.7-14.9) for sub-100 nm dynamic random access memory technology (DRAM). The deposition stage for pulsed CVD-W film is composed of 4 sequential steps, resulting one deposition cycle; (1) Reaction of tungsten hexafluoride (WF 6 ) with silane (SiH 4 ) (2) Inert gas purge (3) SiH 4 exposure (4) Inert gas purge while the deposition of conventional CVD-W nucleation is based on the simultaneous flow of SiH 4 and WF 6 . W growth per cycle was extremely linear with growth rate of -1.32 -1.5 nm/cycle at 400°C. W film deposited by pulsed CVD showed a better conformality at the contact holes with an aspect ratio of ∼14 as compared to W film deposited by conventional CVD. It was found that a resistivity of pulsed CVD-W film was closely related with its phase (body centered cubic α-W or primitive cubic β-W) and microstructure characterized by grain size as well as impurity content. The integration results showed that a lower contact resistance was obtained when pulsed CVD-W film was used as a nucleation layer even though pulsed CVD-W film has a higher film resistivity (∼100 mΩ-cm) compared to conventional CVD-W nucleation layer (∼25 μΩ-cm). It was found that a lower contact resistance of pulsed CVD-W based plug fill scheme was mainly due to its better plug filling capability.",
author = "Kim, {Soo Hyun} and Hwang, {Eui Sung} and Park, {Tae Su} and Nohjung Kawk and Pyi, {Seung Ho} and Kim, {Jun Ki} and Hyunchul Sohn",
year = "2004",
month = "12",
day = "1",
language = "English",
pages = "749--755",
journal = "Advanced Metallization Conference (AMC)",
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Pulsed chemical vapor deposition of tungsten (W) thin film as a nucleation layer for W-plug fill of sub-100 nm dynamic random access memory technology. / Kim, Soo Hyun; Hwang, Eui Sung; Park, Tae Su; Kawk, Nohjung; Pyi, Seung Ho; Kim, Jun Ki; Sohn, Hyunchul.

In: Advanced Metallization Conference (AMC), 01.12.2004, p. 749-755.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Pulsed chemical vapor deposition of tungsten (W) thin film as a nucleation layer for W-plug fill of sub-100 nm dynamic random access memory technology

AU - Kim, Soo Hyun

AU - Hwang, Eui Sung

AU - Park, Tae Su

AU - Kawk, Nohjung

AU - Pyi, Seung Ho

AU - Kim, Jun Ki

AU - Sohn, Hyunchul

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Tungsten (W) thin film was deposited using pulsed chemical vapor deposition (pulsed CVD) and evaluated as a nucleation layer for W-plug deposition at the contact with an ultrahigh aspect ratio (contact height: 3.51 μm and aspect ratio: 13.7-14.9) for sub-100 nm dynamic random access memory technology (DRAM). The deposition stage for pulsed CVD-W film is composed of 4 sequential steps, resulting one deposition cycle; (1) Reaction of tungsten hexafluoride (WF 6 ) with silane (SiH 4 ) (2) Inert gas purge (3) SiH 4 exposure (4) Inert gas purge while the deposition of conventional CVD-W nucleation is based on the simultaneous flow of SiH 4 and WF 6 . W growth per cycle was extremely linear with growth rate of -1.32 -1.5 nm/cycle at 400°C. W film deposited by pulsed CVD showed a better conformality at the contact holes with an aspect ratio of ∼14 as compared to W film deposited by conventional CVD. It was found that a resistivity of pulsed CVD-W film was closely related with its phase (body centered cubic α-W or primitive cubic β-W) and microstructure characterized by grain size as well as impurity content. The integration results showed that a lower contact resistance was obtained when pulsed CVD-W film was used as a nucleation layer even though pulsed CVD-W film has a higher film resistivity (∼100 mΩ-cm) compared to conventional CVD-W nucleation layer (∼25 μΩ-cm). It was found that a lower contact resistance of pulsed CVD-W based plug fill scheme was mainly due to its better plug filling capability.

AB - Tungsten (W) thin film was deposited using pulsed chemical vapor deposition (pulsed CVD) and evaluated as a nucleation layer for W-plug deposition at the contact with an ultrahigh aspect ratio (contact height: 3.51 μm and aspect ratio: 13.7-14.9) for sub-100 nm dynamic random access memory technology (DRAM). The deposition stage for pulsed CVD-W film is composed of 4 sequential steps, resulting one deposition cycle; (1) Reaction of tungsten hexafluoride (WF 6 ) with silane (SiH 4 ) (2) Inert gas purge (3) SiH 4 exposure (4) Inert gas purge while the deposition of conventional CVD-W nucleation is based on the simultaneous flow of SiH 4 and WF 6 . W growth per cycle was extremely linear with growth rate of -1.32 -1.5 nm/cycle at 400°C. W film deposited by pulsed CVD showed a better conformality at the contact holes with an aspect ratio of ∼14 as compared to W film deposited by conventional CVD. It was found that a resistivity of pulsed CVD-W film was closely related with its phase (body centered cubic α-W or primitive cubic β-W) and microstructure characterized by grain size as well as impurity content. The integration results showed that a lower contact resistance was obtained when pulsed CVD-W film was used as a nucleation layer even though pulsed CVD-W film has a higher film resistivity (∼100 mΩ-cm) compared to conventional CVD-W nucleation layer (∼25 μΩ-cm). It was found that a lower contact resistance of pulsed CVD-W based plug fill scheme was mainly due to its better plug filling capability.

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JF - Advanced Metallization Conference (AMC)

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