Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill

Soo Hyun Kim, Eui Sung Hwang, Sang Yup Han, Seung Ho Pyi, Nohjung Kawk, Hyunchul Sohn, Jinwoong Kim, Gi Bo Choi

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Tungsten (W) thin film as a nucleation layer for a W plug-fill process was deposited using a modified chemical vapor deposition (CVD) called pulsed CVD, and properties of the films were investigated. Basically, the deposition stage was composed of four separate steps for one deposition cycle: (i) reaction of WF 6 with SiH 4 ; (ii) inert gas purge; (iii) SiH 4 exposure without WF 6 ; and (iv) inert gas purge. A higher deposition rate, ∼1.5 nm/cycle, was obtained as compared to that of atomic layer deposition (ALD) (∼0.25 nm/cycle). The film deposited by pulsed CVD showed a much lower root mean square (rms) roughness (0.87 nm) and better conformality at the contact holes with an aspect ratio of 14 (contact height: 3.51 μm and top diameter: 240 nm) as compared to the layer deposited by conventional CVD using WF 6 and SiH 4 .

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number9
DOIs
Publication statusPublished - 2004 Oct 18

Fingerprint

Tungsten
plugs
Chemical vapor deposition
tungsten
Nucleation
vapor deposition
nucleation
Noble Gases
Thin films
thin films
Inert gases
cycles
rare gases
Atomic layer deposition
atomic layer epitaxy
Deposition rates
aspect ratio
Aspect ratio
electric contacts
roughness

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Soo Hyun ; Hwang, Eui Sung ; Han, Sang Yup ; Pyi, Seung Ho ; Kawk, Nohjung ; Sohn, Hyunchul ; Kim, Jinwoong ; Choi, Gi Bo. / Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill. In: Electrochemical and Solid-State Letters. 2004 ; Vol. 7, No. 9.
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abstract = "Tungsten (W) thin film as a nucleation layer for a W plug-fill process was deposited using a modified chemical vapor deposition (CVD) called pulsed CVD, and properties of the films were investigated. Basically, the deposition stage was composed of four separate steps for one deposition cycle: (i) reaction of WF 6 with SiH 4 ; (ii) inert gas purge; (iii) SiH 4 exposure without WF 6 ; and (iv) inert gas purge. A higher deposition rate, ∼1.5 nm/cycle, was obtained as compared to that of atomic layer deposition (ALD) (∼0.25 nm/cycle). The film deposited by pulsed CVD showed a much lower root mean square (rms) roughness (0.87 nm) and better conformality at the contact holes with an aspect ratio of 14 (contact height: 3.51 μm and top diameter: 240 nm) as compared to the layer deposited by conventional CVD using WF 6 and SiH 4 .",
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Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill. / Kim, Soo Hyun; Hwang, Eui Sung; Han, Sang Yup; Pyi, Seung Ho; Kawk, Nohjung; Sohn, Hyunchul; Kim, Jinwoong; Choi, Gi Bo.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 9, 18.10.2004.

Research output: Contribution to journalArticle

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T1 - Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill

AU - Kim, Soo Hyun

AU - Hwang, Eui Sung

AU - Han, Sang Yup

AU - Pyi, Seung Ho

AU - Kawk, Nohjung

AU - Sohn, Hyunchul

AU - Kim, Jinwoong

AU - Choi, Gi Bo

PY - 2004/10/18

Y1 - 2004/10/18

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