Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill

Soo Hyun Kim, Eui Sung Hwang, Sang Yup Han, Seung Ho Pyi, Nohjung Kawk, Hyunchul Sohn, Jinwoong Kim, Gi Bo Choi

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Abstract

Tungsten (W) thin film as a nucleation layer for a W plug-fill process was deposited using a modified chemical vapor deposition (CVD) called pulsed CVD, and properties of the films were investigated. Basically, the deposition stage was composed of four separate steps for one deposition cycle: (i) reaction of WF6 with SiH4; (ii) inert gas purge; (iii) SiH4 exposure without WF6; and (iv) inert gas purge. A higher deposition rate, ∼1.5 nm/cycle, was obtained as compared to that of atomic layer deposition (ALD) (∼0.25 nm/cycle). The film deposited by pulsed CVD showed a much lower root mean square (rms) roughness (0.87 nm) and better conformality at the contact holes with an aspect ratio of 14 (contact height: 3.51 μm and top diameter: 240 nm) as compared to the layer deposited by conventional CVD using WF6 and SiH4.

Original languageEnglish
Pages (from-to)G195-G197
JournalElectrochemical and Solid-State Letters
Volume7
Issue number9
DOIs
Publication statusPublished - 2004 Oct 18

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, S. H., Hwang, E. S., Han, S. Y., Pyi, S. H., Kawk, N., Sohn, H., Kim, J., & Choi, G. B. (2004). Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill. Electrochemical and Solid-State Letters, 7(9), G195-G197. https://doi.org/10.1149/1.1784053