Pulsed DC reactive magnetron sputtering of AlN thin films on high frequency LTCC substrates

Jung W. Lee; Jerome J. Cuomo; Baxter F. Moody; Yong S. Cho; Roupen L. Keusseyan

doi:10.1557/proc-783-b5.10

Pulsed DC reactive magnetron sputtering of AlN thin films on high frequency LTCC substrates

Jung W. Lee, Jerome J. Cuomo, Baxter F. Moody, Yong S. Cho, Roupen L. Keusseyan

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

This preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.

Original language	English
Pages (from-to)	139-144
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	783
DOIs	https://doi.org/10.1557/proc-783-b5.10
Publication status	Published - 2003
Event	Materials, Integration and Packaging Issues for High - Frequency Devices - Boston, MA, United States Duration: 2003 Dec 1 → 2003 Dec 3

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Pulsed DC reactive magnetron sputtering of AlN thin films on high frequency LTCC substrates",

abstract = "This preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.",

author = "Lee, {Jung W.} and Cuomo, {Jerome J.} and Moody, {Baxter F.} and Cho, {Yong S.} and Keusseyan, {Roupen L.}",

year = "2003",

doi = "10.1557/proc-783-b5.10",

language = "English",

volume = "783",

pages = "139--144",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials, Integration and Packaging Issues for High - Frequency Devices ; Conference date: 01-12-2003 Through 03-12-2003",

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TY - JOUR

T1 - Pulsed DC reactive magnetron sputtering of AlN thin films on high frequency LTCC substrates

AU - Lee, Jung W.

AU - Cuomo, Jerome J.

AU - Moody, Baxter F.

AU - Cho, Yong S.

AU - Keusseyan, Roupen L.

PY - 2003

Y1 - 2003

N2 - This preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.

AB - This preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.

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U2 - 10.1557/proc-783-b5.10

DO - 10.1557/proc-783-b5.10

M3 - Conference article

AN - SCOPUS:3042580555

SN - 0272-9172

VL - 783

SP - 139

EP - 144

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials, Integration and Packaging Issues for High - Frequency Devices

Y2 - 1 December 2003 through 3 December 2003

ER -

Pulsed DC reactive magnetron sputtering of AlN thin films on high frequency LTCC substrates

Abstract

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