Pulsed laser deposition of ZnO thin films for applications of light emission

Sang Hyuck Bae, Sang Yeol Lee, Beom Jun Jin, Seongil Im

Research output: Contribution to journalConference article

68 Citations (Scopus)

Abstract

ZnO is a material suitable for light emission. In order to investigate the light emission properties, ZnO thin films were deposited on (0001) sapphire substrates by pulsed laser deposition (PLD) technique using an Nd:YAG laser with a wavelength of 355 nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiment was performed for substrate temperatures in the range 200-600 °C. The deposition chamber was filled with the oxygen at working pressures between 10-6 and 5×10-1 Torr. According to observations, the intensity of the light emission of laser-ablated ZnO thin films increased as substrate temperatures increased from 200 to 600 °C. We investigated the structural, electrical and optical properties of ZnO thin films using X-ray diffraction (XRD), van der Paul Hall measurements, photoluminescence (PL), and Rutherford backscattering spectrometry (RBS).

Original languageEnglish
Pages (from-to)458-461
Number of pages4
JournalApplied Surface Science
Volume154
DOIs
Publication statusPublished - 2000 Feb 1
EventThe Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) - Strasbourg, France
Duration: 1999 Jun 11999 Jun 4

Fingerprint

Light emission
Pulsed laser deposition
Thin films
Substrates
Lasers
Oxygen
Aluminum Oxide
Rutherford backscattering spectroscopy
Sapphire
Temperature
Spectrometry
Structural properties
Photoluminescence
Electric properties
Optical properties
X ray diffraction
Wavelength
Experiments

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Bae, Sang Hyuck ; Lee, Sang Yeol ; Jun Jin, Beom ; Im, Seongil. / Pulsed laser deposition of ZnO thin films for applications of light emission. In: Applied Surface Science. 2000 ; Vol. 154. pp. 458-461.
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Pulsed laser deposition of ZnO thin films for applications of light emission. / Bae, Sang Hyuck; Lee, Sang Yeol; Jun Jin, Beom; Im, Seongil.

In: Applied Surface Science, Vol. 154, 01.02.2000, p. 458-461.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Pulsed laser deposition of ZnO thin films for applications of light emission

AU - Bae, Sang Hyuck

AU - Lee, Sang Yeol

AU - Jun Jin, Beom

AU - Im, Seongil

PY - 2000/2/1

Y1 - 2000/2/1

N2 - ZnO is a material suitable for light emission. In order to investigate the light emission properties, ZnO thin films were deposited on (0001) sapphire substrates by pulsed laser deposition (PLD) technique using an Nd:YAG laser with a wavelength of 355 nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiment was performed for substrate temperatures in the range 200-600 °C. The deposition chamber was filled with the oxygen at working pressures between 10-6 and 5×10-1 Torr. According to observations, the intensity of the light emission of laser-ablated ZnO thin films increased as substrate temperatures increased from 200 to 600 °C. We investigated the structural, electrical and optical properties of ZnO thin films using X-ray diffraction (XRD), van der Paul Hall measurements, photoluminescence (PL), and Rutherford backscattering spectrometry (RBS).

AB - ZnO is a material suitable for light emission. In order to investigate the light emission properties, ZnO thin films were deposited on (0001) sapphire substrates by pulsed laser deposition (PLD) technique using an Nd:YAG laser with a wavelength of 355 nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiment was performed for substrate temperatures in the range 200-600 °C. The deposition chamber was filled with the oxygen at working pressures between 10-6 and 5×10-1 Torr. According to observations, the intensity of the light emission of laser-ablated ZnO thin films increased as substrate temperatures increased from 200 to 600 °C. We investigated the structural, electrical and optical properties of ZnO thin films using X-ray diffraction (XRD), van der Paul Hall measurements, photoluminescence (PL), and Rutherford backscattering spectrometry (RBS).

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