Abstract
Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.
Original language | English |
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Pages (from-to) | 352-357 |
Number of pages | 6 |
Journal | Advances in Applied Ceramics |
Volume | 113 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2014 Aug |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Industrial and Manufacturing Engineering