Purification and particle size control of b-SiC powder using thermocycling process

E. J. Jung, Y. J. Lee, S. R. Kim, W. T. Kwon, D. J. Choi, Y. Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.

Original languageEnglish
Pages (from-to)352-357
Number of pages6
JournalAdvances in Applied Ceramics
Volume113
Issue number6
DOIs
Publication statusPublished - 2014 Aug

Fingerprint

Thermal cycling
Powders
Purification
Particle size
Heat treatment
Single crystals
Polymethyl Methacrylate
Sols
Crystallization
Vaporization
Crystal growth
Silicon Dioxide
Silica
Impurities
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Industrial and Manufacturing Engineering

Cite this

Jung, E. J. ; Lee, Y. J. ; Kim, S. R. ; Kwon, W. T. ; Choi, D. J. ; Kim, Y. / Purification and particle size control of b-SiC powder using thermocycling process. In: Advances in Applied Ceramics. 2014 ; Vol. 113, No. 6. pp. 352-357.
@article{76571c42c90e495ba0b97ace6c9122ea,
title = "Purification and particle size control of b-SiC powder using thermocycling process",
abstract = "Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5{\%} was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.",
author = "Jung, {E. J.} and Lee, {Y. J.} and Kim, {S. R.} and Kwon, {W. T.} and Choi, {D. J.} and Y. Kim",
year = "2014",
month = "8",
doi = "10.1179/1743676114Y.0000000171",
language = "English",
volume = "113",
pages = "352--357",
journal = "Advances in Applied Ceramics",
issn = "1743-6753",
publisher = "Maney Publishing",
number = "6",

}

Purification and particle size control of b-SiC powder using thermocycling process. / Jung, E. J.; Lee, Y. J.; Kim, S. R.; Kwon, W. T.; Choi, D. J.; Kim, Y.

In: Advances in Applied Ceramics, Vol. 113, No. 6, 08.2014, p. 352-357.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Purification and particle size control of b-SiC powder using thermocycling process

AU - Jung, E. J.

AU - Lee, Y. J.

AU - Kim, S. R.

AU - Kwon, W. T.

AU - Choi, D. J.

AU - Kim, Y.

PY - 2014/8

Y1 - 2014/8

N2 - Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.

AB - Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.

UR - http://www.scopus.com/inward/record.url?scp=84904754778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904754778&partnerID=8YFLogxK

U2 - 10.1179/1743676114Y.0000000171

DO - 10.1179/1743676114Y.0000000171

M3 - Article

AN - SCOPUS:84904754778

VL - 113

SP - 352

EP - 357

JO - Advances in Applied Ceramics

JF - Advances in Applied Ceramics

SN - 1743-6753

IS - 6

ER -