Abstract
Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.
| Original language | English |
|---|---|
| Pages (from-to) | 352-357 |
| Number of pages | 6 |
| Journal | Advances in Applied Ceramics |
| Volume | 113 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2014 Aug |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Industrial and Manufacturing Engineering
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Purification and particle size control of b-SiC powder using thermocycling process. / Jung, E. J.; Lee, Y. J.; Kim, S. R.; Kwon, W. T.; Choi, D. J.; Kim, Y.
In: Advances in Applied Ceramics, Vol. 113, No. 6, 08.2014, p. 352-357.Research output: Contribution to journal › Article
TY - JOUR
T1 - Purification and particle size control of b-SiC powder using thermocycling process
AU - Jung, E. J.
AU - Lee, Y. J.
AU - Kim, S. R.
AU - Kwon, W. T.
AU - Choi, D. J.
AU - Kim, Y.
PY - 2014/8
Y1 - 2014/8
N2 - Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.
AB - Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.
UR - http://www.scopus.com/inward/record.url?scp=84904754778&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84904754778&partnerID=8YFLogxK
U2 - 10.1179/1743676114Y.0000000171
DO - 10.1179/1743676114Y.0000000171
M3 - Article
AN - SCOPUS:84904754778
VL - 113
SP - 352
EP - 357
JO - Advances in Applied Ceramics
JF - Advances in Applied Ceramics
SN - 1743-6753
IS - 6
ER -