Quantification of interfacial state density (D it) at the high-k/III-V interface based on Hall effect measurements

D. Veksler, P. Nagaiah, T. Chidambaram, R. Cammarere, V. Tokranov, M. Yakimov, Y. T. Chen, J. Huang, N. Goel, J. Oh, G. Bersuker, C. Hobbs, P. D. Kirsch, S. Oktyabrsky

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Abstract

In this work, we propose a method to quantify the density of interfacial states at the oxide/semiconductor interface using only Hall concentration and low frequency capacitance-voltage data. We discuss the advantages of the proposed method over commonly used admittance techniques in characterizing highly disordered interfaces between the high-k dielectric and high mobility substrates. This gated Hall method is employed to characterize high-k/IIIV interface quality in metal-oxide semiconductor high electron mobility transistor structures with high mobility InGaAs channels.

Original languageEnglish
Article number054504
JournalJournal of Applied Physics
Volume112
Issue number5
DOIs
Publication statusPublished - 2012 Sep 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Veksler, D., Nagaiah, P., Chidambaram, T., Cammarere, R., Tokranov, V., Yakimov, M., Chen, Y. T., Huang, J., Goel, N., Oh, J., Bersuker, G., Hobbs, C., Kirsch, P. D., & Oktyabrsky, S. (2012). Quantification of interfacial state density (D it) at the high-k/III-V interface based on Hall effect measurements. Journal of Applied Physics, 112(5), [054504]. https://doi.org/10.1063/1.4749403