Quantitative analysis of effect of dopant interaction on microstructural, physical, and electrical properties in laser-annealed SiGe:B:Ga film

Kiseok Lee, Seunghyun Baik, Joosung Kang, Hyerin Shin, Dongmin Yoon, Soyoung Kim, Jinwoo Moon, Dong Chan Suh, Dae Hong Ko

Research output: Contribution to journalArticlepeer-review


Lowering the contact resistivity at the metal/semiconductor interface is a necessary requirement in the development of next-generation p-type metal-oxide-semiconductor logic devices. The contact resistivity can be lowered by B and Ga co-ion implantation followed by nanosecond laser annealing (NLA), a state-of-the-art annealing method, which can effectively incorporate dopants into the Si1-xGex lattice, surpassing the solid solubility limit. When only the Ga-doped Si1-xGex (SiGe:Ga) layer is used as a source/drain material, the electrical characteristics deteriorate in terms of bulk resistivity and device reliability owing to the graded Ga profile. However, it is possible to implement a uniform B profile in the B and Ga co-doped Si1-xGex (SiGe:B:Ga) layer during NLA. In this study, we quantitatively investigated the effects of the B and Ga interactions on the microstructure, surface roughness, and lattice parameters of the laser-annealed SiGe:B:Ga films. We observed decreased defects on the surface and improved surface morphology after B co-doping; after analysis through reciprocal space mapping, we deduced that Ga had a higher contribution to the lattice parameter than B at the same B and Ga ion-implantation dose. Furthermore, by measuring the sheet resistance according to the type of dopant (B and Ga), we compared the electrical properties of the laser-annealed III-element-doped Si1-xGex films with the B and Ga profiles after NLA. Our comprehensive study provides information on the behavior and interaction of B and Ga during NLA, thus presenting a path to understanding the physical and electrical properties of SiGe:B:Ga films.

Original languageEnglish
Article number139173
JournalThin Solid Films
Publication statusPublished - 2022 Apr 30

Bibliographical note

Funding Information:
This work was supported by Samsung Electronics Co., Ltd ( IO210719-08824-01 )

Publisher Copyright:
© 2022 Elsevier B.V.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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