Abstract
The quantitative evaluation of impurities in Si was performed and their thermodynamic behaviors were investigated using acid leaching treatment and oxidation/vaporization of metallurgical-grade Si (MG-Si). HCl and aqua regia solution are found to be more effective than HF solution for the removal of Ca, Fe, and Al in the Si. The mechanism by which the impurities dissolve was investigated using the FactSage™ software program. As the oxidation layer at the Si interface becomes thicker, the removal rate associated with vaporization of the impurities decreases. This seems to occur because the evaporation potential is decreased by the formation of an oxidation layer that interrupts the evaporation process. The efficiency of the removal of impurities from MG-Si can be evaluated quantitatively using acid leaching and oxidation/vaporization treatments of Si. Crown
| Original language | English |
|---|---|
| Pages (from-to) | S172-S176 |
| Journal | Current Applied Physics |
| Volume | 13 |
| Issue number | 4 SUPPL.2 |
| DOIs | |
| Publication status | Published - 2013 Jul 20 |
Bibliographical note
Funding Information:This work was supported by the “Brain Korea 21 (BK 21) Project” and the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Knowledge Economy .
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)