Quantitative evaluation of methods for effective removal of impurities to produce solar-grade silicon

Eun Jin Jung, Byung Moon Moon, Dong Joon Min

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The quantitative evaluation of impurities in Si was performed and their thermodynamic behaviors were investigated using acid leaching treatment and oxidation/vaporization of metallurgical-grade Si (MG-Si). HCl and aqua regia solution are found to be more effective than HF solution for the removal of Ca, Fe, and Al in the Si. The mechanism by which the impurities dissolve was investigated using the FactSage™ software program. As the oxidation layer at the Si interface becomes thicker, the removal rate associated with vaporization of the impurities decreases. This seems to occur because the evaporation potential is decreased by the formation of an oxidation layer that interrupts the evaporation process. The efficiency of the removal of impurities from MG-Si can be evaluated quantitatively using acid leaching and oxidation/vaporization treatments of Si. Crown

Original languageEnglish
JournalCurrent Applied Physics
Volume13
Issue number4 SUPPL.2
DOIs
Publication statusPublished - 2013 Jul 20

Fingerprint

Silicon
grade
Vaporization
Impurities
impurities
Oxidation
oxidation
evaluation
silicon
leaching
Leaching
Evaporation
evaporation
acids
Acids
Thermodynamics
computer programs
thermodynamics

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

@article{8ebce1ccd08f419ea7fd9a5420b581a7,
title = "Quantitative evaluation of methods for effective removal of impurities to produce solar-grade silicon",
abstract = "The quantitative evaluation of impurities in Si was performed and their thermodynamic behaviors were investigated using acid leaching treatment and oxidation/vaporization of metallurgical-grade Si (MG-Si). HCl and aqua regia solution are found to be more effective than HF solution for the removal of Ca, Fe, and Al in the Si. The mechanism by which the impurities dissolve was investigated using the FactSage™ software program. As the oxidation layer at the Si interface becomes thicker, the removal rate associated with vaporization of the impurities decreases. This seems to occur because the evaporation potential is decreased by the formation of an oxidation layer that interrupts the evaporation process. The efficiency of the removal of impurities from MG-Si can be evaluated quantitatively using acid leaching and oxidation/vaporization treatments of Si. Crown",
author = "Jung, {Eun Jin} and Moon, {Byung Moon} and Min, {Dong Joon}",
year = "2013",
month = "7",
day = "20",
doi = "10.1016/j.cap.2013.02.001",
language = "English",
volume = "13",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "4 SUPPL.2",

}

Quantitative evaluation of methods for effective removal of impurities to produce solar-grade silicon. / Jung, Eun Jin; Moon, Byung Moon; Min, Dong Joon.

In: Current Applied Physics, Vol. 13, No. 4 SUPPL.2, 20.07.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Quantitative evaluation of methods for effective removal of impurities to produce solar-grade silicon

AU - Jung, Eun Jin

AU - Moon, Byung Moon

AU - Min, Dong Joon

PY - 2013/7/20

Y1 - 2013/7/20

N2 - The quantitative evaluation of impurities in Si was performed and their thermodynamic behaviors were investigated using acid leaching treatment and oxidation/vaporization of metallurgical-grade Si (MG-Si). HCl and aqua regia solution are found to be more effective than HF solution for the removal of Ca, Fe, and Al in the Si. The mechanism by which the impurities dissolve was investigated using the FactSage™ software program. As the oxidation layer at the Si interface becomes thicker, the removal rate associated with vaporization of the impurities decreases. This seems to occur because the evaporation potential is decreased by the formation of an oxidation layer that interrupts the evaporation process. The efficiency of the removal of impurities from MG-Si can be evaluated quantitatively using acid leaching and oxidation/vaporization treatments of Si. Crown

AB - The quantitative evaluation of impurities in Si was performed and their thermodynamic behaviors were investigated using acid leaching treatment and oxidation/vaporization of metallurgical-grade Si (MG-Si). HCl and aqua regia solution are found to be more effective than HF solution for the removal of Ca, Fe, and Al in the Si. The mechanism by which the impurities dissolve was investigated using the FactSage™ software program. As the oxidation layer at the Si interface becomes thicker, the removal rate associated with vaporization of the impurities decreases. This seems to occur because the evaporation potential is decreased by the formation of an oxidation layer that interrupts the evaporation process. The efficiency of the removal of impurities from MG-Si can be evaluated quantitatively using acid leaching and oxidation/vaporization treatments of Si. Crown

UR - http://www.scopus.com/inward/record.url?scp=84890571883&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890571883&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2013.02.001

DO - 10.1016/j.cap.2013.02.001

M3 - Article

VL - 13

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 4 SUPPL.2

ER -