Quantitative evaluation of methods for effective removal of impurities to produce solar-grade silicon

Eun Jin Jung; Byung Moon Moon; Dong Joon Min

doi:10.1016/j.cap.2013.02.001

Quantitative evaluation of methods for effective removal of impurities to produce solar-grade silicon

Eun Jin Jung, Byung Moon Moon, Dong Joon Min

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

The quantitative evaluation of impurities in Si was performed and their thermodynamic behaviors were investigated using acid leaching treatment and oxidation/vaporization of metallurgical-grade Si (MG-Si). HCl and aqua regia solution are found to be more effective than HF solution for the removal of Ca, Fe, and Al in the Si. The mechanism by which the impurities dissolve was investigated using the FactSage™ software program. As the oxidation layer at the Si interface becomes thicker, the removal rate associated with vaporization of the impurities decreases. This seems to occur because the evaporation potential is decreased by the formation of an oxidation layer that interrupts the evaporation process. The efficiency of the removal of impurities from MG-Si can be evaluated quantitatively using acid leaching and oxidation/vaporization treatments of Si. Crown

Original language	English
Pages (from-to)	S172-S176
Journal	Current Applied Physics
Volume	13
Issue number	4 SUPPL.2
DOIs	https://doi.org/10.1016/j.cap.2013.02.001
Publication status	Published - 2013 Jul 20

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2013.02.001

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Jung, E. J., Moon, B. M., & Min, D. J. (2013). Quantitative evaluation of methods for effective removal of impurities to produce solar-grade silicon. Current Applied Physics, 13(4 SUPPL.2), S172-S176. https://doi.org/10.1016/j.cap.2013.02.001

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AB - The quantitative evaluation of impurities in Si was performed and their thermodynamic behaviors were investigated using acid leaching treatment and oxidation/vaporization of metallurgical-grade Si (MG-Si). HCl and aqua regia solution are found to be more effective than HF solution for the removal of Ca, Fe, and Al in the Si. The mechanism by which the impurities dissolve was investigated using the FactSage™ software program. As the oxidation layer at the Si interface becomes thicker, the removal rate associated with vaporization of the impurities decreases. This seems to occur because the evaporation potential is decreased by the formation of an oxidation layer that interrupts the evaporation process. The efficiency of the removal of impurities from MG-Si can be evaluated quantitatively using acid leaching and oxidation/vaporization treatments of Si. Crown

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