Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors

Kimoon Lee, Byoung H. Lee, Kwang H. Lee, Ji Hoon Park, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report on photo-excited trap-charge-collection spectroscopy as a direct probe of the traps in organic field-effect transistors (OFETs). Monochromatic photon beams transmitted through the working channels of 5 V operating pentacene-OFETs with 60 nm thick Al2O3 dielectrics liberate interface charges trapped at the matched energy level while the oxide surfaces were prepared with various self-assembled monolayers (SAMs). The density of states (DOS) of traps is directly mapped as a function of the photon energy by tracking the change in the threshold voltage. While conventional electrical stability measurements qualitatively support our trap DOS spectroscopy results, our direct measurement technique provides a powerful tool for quantitative analysis of the nature and density of interfacial traps in field-effect transistor devices.

Original languageEnglish
Pages (from-to)2659-2663
Number of pages5
JournalJournal of Materials Chemistry
Volume20
Issue number13
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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