Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Jin Wook Lee, Dae Yong Son, Tae Kyu Ahn, Hee Won Shin, In Young Kim, Seong Ju Hwang, Min Jae Ko, Soohwan Sul, Hyouksoo Han, Nam Gyu Park

Research output: Contribution to journalArticle

210 Citations (Scopus)

Abstract

The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

Original languageEnglish
Article number1050
JournalScientific reports
Volume3
DOIs
Publication statusPublished - 2013 Jan 28

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Quantum Dots
Genetic Recombination
Electrons
Injections
Solar System
Lighting

All Science Journal Classification (ASJC) codes

  • General

Cite this

Lee, J. W., Son, D. Y., Ahn, T. K., Shin, H. W., Kim, I. Y., Hwang, S. J., ... Park, N. G. (2013). Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent. Scientific reports, 3, [1050]. https://doi.org/10.1038/srep01050
Lee, Jin Wook ; Son, Dae Yong ; Ahn, Tae Kyu ; Shin, Hee Won ; Kim, In Young ; Hwang, Seong Ju ; Ko, Min Jae ; Sul, Soohwan ; Han, Hyouksoo ; Park, Nam Gyu. / Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent. In: Scientific reports. 2013 ; Vol. 3.
@article{44e36c5d44a943f4ae083589eb619421,
title = "Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent",
abstract = "The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6{\%} is demonstrated at one sun illumination.",
author = "Lee, {Jin Wook} and Son, {Dae Yong} and Ahn, {Tae Kyu} and Shin, {Hee Won} and Kim, {In Young} and Hwang, {Seong Ju} and Ko, {Min Jae} and Soohwan Sul and Hyouksoo Han and Park, {Nam Gyu}",
year = "2013",
month = "1",
day = "28",
doi = "10.1038/srep01050",
language = "English",
volume = "3",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

Lee, JW, Son, DY, Ahn, TK, Shin, HW, Kim, IY, Hwang, SJ, Ko, MJ, Sul, S, Han, H & Park, NG 2013, 'Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent', Scientific reports, vol. 3, 1050. https://doi.org/10.1038/srep01050

Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent. / Lee, Jin Wook; Son, Dae Yong; Ahn, Tae Kyu; Shin, Hee Won; Kim, In Young; Hwang, Seong Ju; Ko, Min Jae; Sul, Soohwan; Han, Hyouksoo; Park, Nam Gyu.

In: Scientific reports, Vol. 3, 1050, 28.01.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

AU - Lee, Jin Wook

AU - Son, Dae Yong

AU - Ahn, Tae Kyu

AU - Shin, Hee Won

AU - Kim, In Young

AU - Hwang, Seong Ju

AU - Ko, Min Jae

AU - Sul, Soohwan

AU - Han, Hyouksoo

AU - Park, Nam Gyu

PY - 2013/1/28

Y1 - 2013/1/28

N2 - The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

AB - The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

UR - http://www.scopus.com/inward/record.url?scp=84872713504&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872713504&partnerID=8YFLogxK

U2 - 10.1038/srep01050

DO - 10.1038/srep01050

M3 - Article

C2 - 23308343

AN - SCOPUS:84872713504

VL - 3

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 1050

ER -