Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Jin Wook Lee, Dae Yong Son, Tae Kyu Ahn, Hee Won Shin, In Young Kim, Seong Ju Hwang, Min Jae Ko, Soohwan Sul, Hyouksoo Han, Nam Gyu Park

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232 Citations (Scopus)

Abstract

The reported photocurrent density (J SC) of PbS quantum dot (QD)-sensitized solar cell was less than 19 mA/cm2 despite the capability to generate 38 mA/cm2, which results from inefficient electron injection and fast charge recombination. Here, we report on a PbS:Hg QD-sensitized solar cell with an unprecedentedly high J SC of 30 mA/cm2. By Hg 2+ doping into PbS, J SC is almost doubled with improved stability. Femtosecond transient study confirms that the improved J SC is due to enhanced electron injection and suppressed charge recombination. EXAFS reveals that Pb-S bond is reinforced and structural disorder is reduced by interstitially incorporated Hg2+, which is responsible for the enhanced electron injection, suppressed recombination and stability. Thanks to the extremely high J SC, power conversion efficiency of 5.6% is demonstrated at one sun illumination.

Original languageEnglish
Article number1050
JournalScientific reports
Volume3
DOIs
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) of Korea under contracts No. 2012-0005601, R31-2008-10029 (WCU program) and the Global Frontier R&D Program on Center for Multiscale Energy System. J.-W.L. is grateful to global PhD fellowship grant from NRF under contract No. 2011-0008000. The experiments at Pohang Accelerator Laboratory (PAN) were supported in part by MEST and POSTECH.

All Science Journal Classification (ASJC) codes

  • General

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