Quantum size effect on Shubnikov-de Haas oscillations in 100 nm diameter single-crystalline bismuth nanowire

Jeongmin Kim, Dohun Kim, Taehoo Chang, Wooyoung Lee

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Quantum size effect (QSE) in Bi nanowire is theoretically predicted to decrease band overlap energy resulting in semimetal-to-semiconductor transition. However, this effect has been rarely demonstrated on transport properties because of carrier-surface scattering and charge carriers induced from surface states of Bi. We report QSE on Shubnikov-de Haas (SdH) oscillations in a single-crystalline Bi nanowire with a diameter of 100 nm. The variation of intrinsic properties estimated using SdH oscillations indicates that the subband energy shift due to QSE. The enhanced effective mass of the electrons is consistent with the theoretical prediction pertaining to strong electron-hole coupling of Bi.

Original languageEnglish
Article number123107
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2014 Sep 22


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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