Abstract
Quantum size effect (QSE) in Bi nanowire is theoretically predicted to decrease band overlap energy resulting in semimetal-to-semiconductor transition. However, this effect has been rarely demonstrated on transport properties because of carrier-surface scattering and charge carriers induced from surface states of Bi. We report QSE on Shubnikov-de Haas (SdH) oscillations in a single-crystalline Bi nanowire with a diameter of 100 nm. The variation of intrinsic properties estimated using SdH oscillations indicates that the subband energy shift due to QSE. The enhanced effective mass of the electrons is consistent with the theoretical prediction pertaining to strong electron-hole coupling of Bi.
Original language | English |
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Article number | 123107 |
Journal | Applied Physics Letters |
Volume | 105 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2014 Sept 22 |
Bibliographical note
Publisher Copyright:© 2014 AIP Publishing LLC.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)