Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

Yunah Lee, Yunyeong Chang, Huije Ryu, Jong Hun Kim, Kenji Watanabe, Takashi Taniguchi, Miyoung Kim, Gwan Hyoung Lee

Research output: Contribution to journalArticlepeer-review


Heterointerfaces between two-dimensional (2D) materials and bulk metals determine the electrical and optical properties of their heterostructures. Although deposition of various metals on 2D materials has been studied, there is still a lack of studies on the interaction at the van der Waals (vdW) heterointerface between 2D materials and metals. Here, we report quasi-van der Waals (qvdW) epitaxial recrystallization of a gold thin film into crystallographically aligned single crystals by encapsulation annealing of a gold thin film with hexagonal boron nitride (hBN). When a polycrystalline gold thin film passivated with hBN was annealed, it was recrystallized into single gold crystals with a planar shape and crystallographic alignment with hBN due to a strong interaction between the gold film and hBN at the heterointerface. This reflects that a weak vdW force at the heterointerface is sufficiently strong to induce epitaxial recrystallization. Using this method, we fabricated a gold nanocrystal array with the same crystalline orientation and smooth top surface. Our work demonstrates a new method for epitaxial recrystallization of bulk crystals and provides a deep understanding of the interaction at the vdW heterointerface of 2D materials and metals.

Original languageEnglish
Pages (from-to)6092-6097
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number4
Publication statusPublished - 2023 Feb 1

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea Grant funded by the Korean Government (2018M3D1A1058793) and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2017R1A2B2006568 and NRF-2021M3F3A2A01037858). G.-H.L. acknowledges the support from the Research Institute of Advanced Materials (RIAM), Institute of Engineering Research (IER), Institute of Applied Physics (IAP), and Inter-University Semiconductor Research Center (ISRC) at the Seoul National University. K.W. and T.T. acknowledge support from JSPS KAKENHI (Grant Numbers 19H05790, 20H00354, and 21H05233) and A3 Foresight by JSPS.

Publisher Copyright:
© 2022 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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