Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

Yunah Lee; Yunyeong Chang; Huije Ryu; Jong Hun Kim; Kenji Watanabe; Takashi Taniguchi; Miyoung Kim; Gwan Hyoung Lee

doi:10.1021/acsami.2c18514

Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

Yunah Lee, Yunyeong Chang, Huije Ryu, Jong Hun Kim, Kenji Watanabe, Takashi Taniguchi, Miyoung Kim, Gwan Hyoung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Heterointerfaces between two-dimensional (2D) materials and bulk metals determine the electrical and optical properties of their heterostructures. Although deposition of various metals on 2D materials has been studied, there is still a lack of studies on the interaction at the van der Waals (vdW) heterointerface between 2D materials and metals. Here, we report quasi-van der Waals (qvdW) epitaxial recrystallization of a gold thin film into crystallographically aligned single crystals by encapsulation annealing of a gold thin film with hexagonal boron nitride (hBN). When a polycrystalline gold thin film passivated with hBN was annealed, it was recrystallized into single gold crystals with a planar shape and crystallographic alignment with hBN due to a strong interaction between the gold film and hBN at the heterointerface. This reflects that a weak vdW force at the heterointerface is sufficiently strong to induce epitaxial recrystallization. Using this method, we fabricated a gold nanocrystal array with the same crystalline orientation and smooth top surface. Our work demonstrates a new method for epitaxial recrystallization of bulk crystals and provides a deep understanding of the interaction at the vdW heterointerface of 2D materials and metals.

Original language	English
Pages (from-to)	6092-6097
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	4
DOIs	https://doi.org/10.1021/acsami.2c18514
Publication status	Published - 2023 Feb 1

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea Grant funded by the Korean Government (2018M3D1A1058793) and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2017R1A2B2006568 and NRF-2021M3F3A2A01037858). G.-H.L. acknowledges the support from the Research Institute of Advanced Materials (RIAM), Institute of Engineering Research (IER), Institute of Applied Physics (IAP), and Inter-University Semiconductor Research Center (ISRC) at the Seoul National University. K.W. and T.T. acknowledge support from JSPS KAKENHI (Grant Numbers 19H05790, 20H00354, and 21H05233) and A3 Foresight by JSPS.

Publisher Copyright:
© 2022 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/acsami.2c18514

Cite this

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title = "Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals",

abstract = "Heterointerfaces between two-dimensional (2D) materials and bulk metals determine the electrical and optical properties of their heterostructures. Although deposition of various metals on 2D materials has been studied, there is still a lack of studies on the interaction at the van der Waals (vdW) heterointerface between 2D materials and metals. Here, we report quasi-van der Waals (qvdW) epitaxial recrystallization of a gold thin film into crystallographically aligned single crystals by encapsulation annealing of a gold thin film with hexagonal boron nitride (hBN). When a polycrystalline gold thin film passivated with hBN was annealed, it was recrystallized into single gold crystals with a planar shape and crystallographic alignment with hBN due to a strong interaction between the gold film and hBN at the heterointerface. This reflects that a weak vdW force at the heterointerface is sufficiently strong to induce epitaxial recrystallization. Using this method, we fabricated a gold nanocrystal array with the same crystalline orientation and smooth top surface. Our work demonstrates a new method for epitaxial recrystallization of bulk crystals and provides a deep understanding of the interaction at the vdW heterointerface of 2D materials and metals.",

author = "Yunah Lee and Yunyeong Chang and Huije Ryu and Kim, {Jong Hun} and Kenji Watanabe and Takashi Taniguchi and Miyoung Kim and Lee, {Gwan Hyoung}",

note = "Funding Information: This research was supported by the National Research Foundation of Korea Grant funded by the Korean Government (2018M3D1A1058793) and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2017R1A2B2006568 and NRF-2021M3F3A2A01037858). G.-H.L. acknowledges the support from the Research Institute of Advanced Materials (RIAM), Institute of Engineering Research (IER), Institute of Applied Physics (IAP), and Inter-University Semiconductor Research Center (ISRC) at the Seoul National University. K.W. and T.T. acknowledge support from JSPS KAKENHI (Grant Numbers 19H05790, 20H00354, and 21H05233) and A3 Foresight by JSPS. Publisher Copyright: {\textcopyright} 2022 American Chemical Society.",

year = "2023",

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doi = "10.1021/acsami.2c18514",

language = "English",

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AU - Lee, Yunah

AU - Chang, Yunyeong

AU - Ryu, Huije

AU - Kim, Jong Hun

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Kim, Miyoung

AU - Lee, Gwan Hyoung

N1 - Funding Information: This research was supported by the National Research Foundation of Korea Grant funded by the Korean Government (2018M3D1A1058793) and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2017R1A2B2006568 and NRF-2021M3F3A2A01037858). G.-H.L. acknowledges the support from the Research Institute of Advanced Materials (RIAM), Institute of Engineering Research (IER), Institute of Applied Physics (IAP), and Inter-University Semiconductor Research Center (ISRC) at the Seoul National University. K.W. and T.T. acknowledge support from JSPS KAKENHI (Grant Numbers 19H05790, 20H00354, and 21H05233) and A3 Foresight by JSPS. Publisher Copyright: © 2022 American Chemical Society.

PY - 2023/2/1

Y1 - 2023/2/1

N2 - Heterointerfaces between two-dimensional (2D) materials and bulk metals determine the electrical and optical properties of their heterostructures. Although deposition of various metals on 2D materials has been studied, there is still a lack of studies on the interaction at the van der Waals (vdW) heterointerface between 2D materials and metals. Here, we report quasi-van der Waals (qvdW) epitaxial recrystallization of a gold thin film into crystallographically aligned single crystals by encapsulation annealing of a gold thin film with hexagonal boron nitride (hBN). When a polycrystalline gold thin film passivated with hBN was annealed, it was recrystallized into single gold crystals with a planar shape and crystallographic alignment with hBN due to a strong interaction between the gold film and hBN at the heterointerface. This reflects that a weak vdW force at the heterointerface is sufficiently strong to induce epitaxial recrystallization. Using this method, we fabricated a gold nanocrystal array with the same crystalline orientation and smooth top surface. Our work demonstrates a new method for epitaxial recrystallization of bulk crystals and provides a deep understanding of the interaction at the vdW heterointerface of 2D materials and metals.

AB - Heterointerfaces between two-dimensional (2D) materials and bulk metals determine the electrical and optical properties of their heterostructures. Although deposition of various metals on 2D materials has been studied, there is still a lack of studies on the interaction at the van der Waals (vdW) heterointerface between 2D materials and metals. Here, we report quasi-van der Waals (qvdW) epitaxial recrystallization of a gold thin film into crystallographically aligned single crystals by encapsulation annealing of a gold thin film with hexagonal boron nitride (hBN). When a polycrystalline gold thin film passivated with hBN was annealed, it was recrystallized into single gold crystals with a planar shape and crystallographic alignment with hBN due to a strong interaction between the gold film and hBN at the heterointerface. This reflects that a weak vdW force at the heterointerface is sufficiently strong to induce epitaxial recrystallization. Using this method, we fabricated a gold nanocrystal array with the same crystalline orientation and smooth top surface. Our work demonstrates a new method for epitaxial recrystallization of bulk crystals and provides a deep understanding of the interaction at the vdW heterointerface of 2D materials and metals.

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JO - ACS applied materials & interfaces

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ER -

Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals

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