Applications of 2D semiconductors have been extensively studied, much oriented to various electron devices. Recently, multivalue field-effect transistors (FETs) are also included among 2D-based electron device studies in consideration that multivalue FETs may resolve power consumption issues in future integrated circuits. Several n-channel devices are thus reported along with a few p-channel devices, while studies to achieve both n- and p-channel multivalue FETs are hardly found. Here, both n- and p-channel multivalue FETs are fabricated using p-MoTe2/n-MoS2 heterostack channel architecture, where either p- or n-channel ternary value FET is reproducible by switching the stacking order of p- and n-channel layer. The main ternary value mechanism originates from resonant tunneling type injection and channel inversion, which take place during device operation. For a state-of-the-art device application in 2D electronics, a quaternary NAND logic circuit is for the first time demonstrated by integrating two ternary n-channel FETs, and a complementary ternary inverter is also fabricated by integrating multivalue p-channel and plain n-channel FET.
|Journal||Advanced Functional Materials|
|Publication status||Published - 2022 Mar 23|
Bibliographical noteFunding Information:
S.P. and H.J.L. contributed equally to this work. The authors acknowledge financial support from the National Research Foundation of Korea (SRC program: grant no.2017R1A5A1014862, vdWMRC) and Yonsei Signature Research Cluster Project.
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics