Quaternary semiconductors with positive crystal field splitting

Potential high-efficiency spin-polarized electron sources

Shiyou Chen, Wan Jian Yin, Ji Hui Yang, X. G. Gong, Aron Walsh, Su Huai Wei

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V2 (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI2 (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting ΔCF near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II2 -VI4 and II-IV-III2 -V4 compounds can have coherent ground state stannite or kesterite structures with large and positive ΔCF due to their increased chemical and structural flexibility. We propose that ZnSiAl2 As4 and CdGeAl2 As4 in the stannite structure, and ZnSnGa2 As4 and CuAlCd 2Se4 in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.

Original languageEnglish
Article number052102
JournalApplied Physics Letters
Volume95
Issue number5
DOIs
Publication statusPublished - 2009 Aug 14

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electron sources
crystal field theory
analogs
ground state
quantum efficiency
flexibility
zinc
valence
polarization

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{8634eb19079d44e6b57ed1bf289420c9,
title = "Quaternary semiconductors with positive crystal field splitting: Potential high-efficiency spin-polarized electron sources",
abstract = "Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V2 (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI2 (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting ΔCF near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II2 -VI4 and II-IV-III2 -V4 compounds can have coherent ground state stannite or kesterite structures with large and positive ΔCF due to their increased chemical and structural flexibility. We propose that ZnSiAl2 As4 and CdGeAl2 As4 in the stannite structure, and ZnSnGa2 As4 and CuAlCd 2Se4 in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.",
author = "Shiyou Chen and Yin, {Wan Jian} and Yang, {Ji Hui} and Gong, {X. G.} and Aron Walsh and Wei, {Su Huai}",
year = "2009",
month = "8",
day = "14",
doi = "10.1063/1.3193662",
language = "English",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Quaternary semiconductors with positive crystal field splitting : Potential high-efficiency spin-polarized electron sources. / Chen, Shiyou; Yin, Wan Jian; Yang, Ji Hui; Gong, X. G.; Walsh, Aron; Wei, Su Huai.

In: Applied Physics Letters, Vol. 95, No. 5, 052102, 14.08.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Quaternary semiconductors with positive crystal field splitting

T2 - Potential high-efficiency spin-polarized electron sources

AU - Chen, Shiyou

AU - Yin, Wan Jian

AU - Yang, Ji Hui

AU - Gong, X. G.

AU - Walsh, Aron

AU - Wei, Su Huai

PY - 2009/8/14

Y1 - 2009/8/14

N2 - Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V2 (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI2 (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting ΔCF near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II2 -VI4 and II-IV-III2 -V4 compounds can have coherent ground state stannite or kesterite structures with large and positive ΔCF due to their increased chemical and structural flexibility. We propose that ZnSiAl2 As4 and CdGeAl2 As4 in the stannite structure, and ZnSnGa2 As4 and CuAlCd 2Se4 in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.

AB - Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V2 (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI2 (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting ΔCF near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II2 -VI4 and II-IV-III2 -V4 compounds can have coherent ground state stannite or kesterite structures with large and positive ΔCF due to their increased chemical and structural flexibility. We propose that ZnSiAl2 As4 and CdGeAl2 As4 in the stannite structure, and ZnSnGa2 As4 and CuAlCd 2Se4 in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.

UR - http://www.scopus.com/inward/record.url?scp=68349127148&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68349127148&partnerID=8YFLogxK

U2 - 10.1063/1.3193662

DO - 10.1063/1.3193662

M3 - Article

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 052102

ER -