Quenching effects on the solution-processed In-Ga-Zn-O system

Doo Hyun Yoon, Si Joon Kim, Dong Lim Kim, Seung Jin Heo, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated quenching effects in solution-processed In-Ga-Zn-O (IGZO). Improved conductivity and crystallinity degradation occurred in quenched IGZO thin-films because of oxygen vacancy generation in a nominal stoichiometric system via defect formation resulting from temperature variation. The optical bandgap was red-shifted in quenched IGZO thin-films due to fluctuations in ionized impurities, such as In4, Ga3, and Zn2, leading to band tailing. Fourier-transform infrared spectra confirmed that quenching effect by liquid nitrogen treatment resulted only from rapid decrement of temperature because there is no generation of chemical bonds during the soaking.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number9
DOIs
Publication statusPublished - 2011 Jul 18

Fingerprint

Quenching
quenching
Thin films
soaking
Chemical bonds
Optical band gaps
Tailings
Liquid nitrogen
Oxygen vacancies
thin films
chemical bonds
liquid nitrogen
crystallinity
Fourier transforms
infrared spectra
Impurities
degradation
Infrared radiation
Degradation
impurities

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this

Yoon, Doo Hyun ; Kim, Si Joon ; Kim, Dong Lim ; Jin Heo, Seung ; Kim, Hyun Jae. / Quenching effects on the solution-processed In-Ga-Zn-O system. In: Electrochemical and Solid-State Letters. 2011 ; Vol. 14, No. 9.
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Quenching effects on the solution-processed In-Ga-Zn-O system. / Yoon, Doo Hyun; Kim, Si Joon; Kim, Dong Lim; Jin Heo, Seung; Kim, Hyun Jae.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 9, 18.07.2011.

Research output: Contribution to journalArticle

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