Quenching of tunneling magnetoresistance at low temperatures

K. I. Lee, J. H. Lee, W. Y. Lee, K. H. Shin, H. C. Ri, B. C. Lee, K. Rhie

Research output: Contribution to journalArticle


It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

Original languageEnglish
Pages (from-to)e1493-e1494
JournalJournal of Magnetism and Magnetic Materials
Issue numberSUPPL. 1
Publication statusPublished - 2004 May 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lee, K. I., Lee, J. H., Lee, W. Y., Shin, K. H., Ri, H. C., Lee, B. C., & Rhie, K. (2004). Quenching of tunneling magnetoresistance at low temperatures. Journal of Magnetism and Magnetic Materials, 272-276(SUPPL. 1), e1493-e1494. https://doi.org/10.1016/j.jmmm.2003.12.282