Quenching of tunneling magnetoresistance at low temperatures

K. I. Lee, J. H. Lee, W. Y. Lee, K. H. Shin, H. C. Ri, B. C. Lee, K. Rhie

Research output: Contribution to journalArticlepeer-review

Abstract

It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

Original languageEnglish
Pages (from-to)e1493-e1494
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2004 May

Bibliographical note

Funding Information:
This work was supported by the electron Spin Science Center at POSTECH and also partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology and KIST Vision21 program.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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