Abstract
The thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell (C/S) nanowires grown by the method of on-film formation of nanowires were systematically investigated. The electrical conductivity and Seebeck coefficient of nanowires with different diameters were measured as a function of the temperature. The contribution of Sn and Sb shells to the total transport in the C/S nanowires was determined using analytical fitting based on the parallel combination of the conductive system model. The carrier-interface boundary scattering at the C/S interface was quantitatively evaluated as the sheet resistance. In addition, the effect of hole doping on the transport properties was also observed in the Bi/Sn C/S nanowires.
| Original language | English |
|---|---|
| Pages (from-to) | 43-48 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 20 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2020 Jan |
Bibliographical note
Funding Information:This work was supported by the Agency for Defense Development, Republic of Korea ( UD170089GD ) and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) ( 2017R1A2A1A17069528 ). JK was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education ( 2019R1I1A1A01063687 )
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)