Abstract
The thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell (C/S) nanowires grown by the method of on-film formation of nanowires were systematically investigated. The electrical conductivity and Seebeck coefficient of nanowires with different diameters were measured as a function of the temperature. The contribution of Sn and Sb shells to the total transport in the C/S nanowires was determined using analytical fitting based on the parallel combination of the conductive system model. The carrier-interface boundary scattering at the C/S interface was quantitatively evaluated as the sheet resistance. In addition, the effect of hole doping on the transport properties was also observed in the Bi/Sn C/S nanowires.
| Original language | English |
|---|---|
| Pages (from-to) | 43-48 |
| Number of pages | 6 |
| Journal | Current Applied Physics |
| Volume | 20 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2020 Jan |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Radial heterostructure and interface effects on thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell nanowires. / Moon, Hongjae; Kim, Jeongmin; Chun, Dong Won; Hong, Seokkyoon; Yoon, Young Soo; Lee, Wooyoung.
In: Current Applied Physics, Vol. 20, No. 1, 01.2020, p. 43-48.Research output: Contribution to journal › Article
TY - JOUR
T1 - Radial heterostructure and interface effects on thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell nanowires
AU - Moon, Hongjae
AU - Kim, Jeongmin
AU - Chun, Dong Won
AU - Hong, Seokkyoon
AU - Yoon, Young Soo
AU - Lee, Wooyoung
PY - 2020/1
Y1 - 2020/1
N2 - The thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell (C/S) nanowires grown by the method of on-film formation of nanowires were systematically investigated. The electrical conductivity and Seebeck coefficient of nanowires with different diameters were measured as a function of the temperature. The contribution of Sn and Sb shells to the total transport in the C/S nanowires was determined using analytical fitting based on the parallel combination of the conductive system model. The carrier-interface boundary scattering at the C/S interface was quantitatively evaluated as the sheet resistance. In addition, the effect of hole doping on the transport properties was also observed in the Bi/Sn C/S nanowires.
AB - The thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell (C/S) nanowires grown by the method of on-film formation of nanowires were systematically investigated. The electrical conductivity and Seebeck coefficient of nanowires with different diameters were measured as a function of the temperature. The contribution of Sn and Sb shells to the total transport in the C/S nanowires was determined using analytical fitting based on the parallel combination of the conductive system model. The carrier-interface boundary scattering at the C/S interface was quantitatively evaluated as the sheet resistance. In addition, the effect of hole doping on the transport properties was also observed in the Bi/Sn C/S nanowires.
UR - http://www.scopus.com/inward/record.url?scp=85073026172&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073026172&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2019.10.007
DO - 10.1016/j.cap.2019.10.007
M3 - Article
AN - SCOPUS:85073026172
VL - 20
SP - 43
EP - 48
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 1
ER -