Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

Y. Kwon; Y. B. Yun; J. M. Ha; J. S. Lee; Y. S. Yoon; J. W. Eun

doi:10.3938/jkps.60.1803

Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

Y. Kwon, Y. B. Yun, J. M. Ha, J. S. Lee, Y. S. Yoon, J. W. Eun

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

Original language	English
Pages (from-to)	1803-1808
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	60
Issue number	10
DOIs	https://doi.org/10.3938/jkps.60.1803
Publication status	Published - 2012 May

Bibliographical note

Funding Information:
The authors would like to thank ARTI’s and EB Tech Co.’s staff members for their kind assistance in the irradiation process. The research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2010K001108) and by a Korea Research Foundation Grant funded by the Korean Government (KRF-2007-314-C00064).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.3938/jkps.60.1803

Cite this

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title = "Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons",

abstract = "A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.",

author = "Y. Kwon and Yun, {Y. B.} and Ha, {J. M.} and Lee, {J. S.} and Yoon, {Y. S.} and Eun, {J. W.}",

note = "Funding Information: The authors would like to thank ARTI{\textquoteright}s and EB Tech Co.{\textquoteright}s staff members for their kind assistance in the irradiation process. The research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2010K001108) and by a Korea Research Foundation Grant funded by the Korean Government (KRF-2007-314-C00064).",

year = "2012",

month = may,

doi = "10.3938/jkps.60.1803",

language = "English",

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AU - Kwon, Y.

AU - Yun, Y. B.

AU - Ha, J. M.

AU - Lee, J. S.

AU - Yoon, Y. S.

AU - Eun, J. W.

N1 - Funding Information: The authors would like to thank ARTI’s and EB Tech Co.’s staff members for their kind assistance in the irradiation process. The research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2010K001108) and by a Korea Research Foundation Grant funded by the Korean Government (KRF-2007-314-C00064).

PY - 2012/5

Y1 - 2012/5

N2 - A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

AB - A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

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Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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