Abstract
A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | 1803-1808 |
| Number of pages | 6 |
| Journal | Journal of the Korean Physical Society |
| Volume | 60 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2012 May 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Kwon, Y., Yun, Y. B., Ha, J. M., Lee, J. S., Yoon, Y. S., & Eun, J. W. (2012). Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons. Journal of the Korean Physical Society, 60(10), 1803-1808. https://doi.org/10.3938/jkps.60.1803