Abstract
A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | 1803-1808 |
| Number of pages | 6 |
| Journal | Journal of the Korean Physical Society |
| Volume | 60 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2012 May 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons. / Kwon, Youngil; Yun, Y. B.; Ha, J. M.; Lee, J. S.; Yoon, Y. S.; Eun, J. W.
In: Journal of the Korean Physical Society, Vol. 60, No. 10, 01.05.2012, p. 1803-1808.Research output: Contribution to journal › Article
TY - JOUR
T1 - Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons
AU - Kwon, Youngil
AU - Yun, Y. B.
AU - Ha, J. M.
AU - Lee, J. S.
AU - Yoon, Y. S.
AU - Eun, J. W.
PY - 2012/5/1
Y1 - 2012/5/1
N2 - A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.
AB - A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.
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U2 - 10.3938/jkps.60.1803
DO - 10.3938/jkps.60.1803
M3 - Article
AN - SCOPUS:84863616510
VL - 60
SP - 1803
EP - 1808
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 10
ER -