A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.
Bibliographical noteFunding Information:
The authors would like to thank ARTI’s and EB Tech Co.’s staff members for their kind assistance in the irradiation process. The research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2010K001108) and by a Korea Research Foundation Grant funded by the Korean Government (KRF-2007-314-C00064).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)