Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

Youngil Kwon, Y. B. Yun, J. M. Ha, J. S. Lee, Y. S. Yoon, J. W. Eun

Research output: Contribution to journalArticle

Abstract

A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

Original languageEnglish
Pages (from-to)1803-1808
Number of pages6
JournalJournal of the Korean Physical Society
Volume60
Issue number10
DOIs
Publication statusPublished - 2012 May 1

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dark current
radiation damage
avalanches
photodiodes
electrons
pixels
damage
irradiation
energy
photons
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kwon, Youngil ; Yun, Y. B. ; Ha, J. M. ; Lee, J. S. ; Yoon, Y. S. ; Eun, J. W. / Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons. In: Journal of the Korean Physical Society. 2012 ; Vol. 60, No. 10. pp. 1803-1808.
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Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons. / Kwon, Youngil; Yun, Y. B.; Ha, J. M.; Lee, J. S.; Yoon, Y. S.; Eun, J. W.

In: Journal of the Korean Physical Society, Vol. 60, No. 10, 01.05.2012, p. 1803-1808.

Research output: Contribution to journalArticle

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