Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

Bugeun Ki, Jiwoong Baek, Chulwon Lee, Yong Hoon Cho, Jungwoo Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.

Original languageEnglish
Title of host publication2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume1
ISBN (Electronic)9781467371094
DOIs
Publication statusPublished - 2016 Jan 7
Event11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of
Duration: 2015 Aug 242015 Aug 28

Other

Other11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
CountryKorea, Republic of
CityBusan
Period15/8/2415/8/28

Fingerprint

plane strain
Annealing
annealing
Lasers
Tensile strain
lasers
Light sources
Si-Ge alloys

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Ki, B., Baek, J., Lee, C., Cho, Y. H., & Oh, J. (2016). Raman analysis of in-plane biaxial strain for Ge-on-Si lasers. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 (Vol. 1). [7375928] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2015.7375928
Ki, Bugeun ; Baek, Jiwoong ; Lee, Chulwon ; Cho, Yong Hoon ; Oh, Jungwoo. / Raman analysis of in-plane biaxial strain for Ge-on-Si lasers. 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2016.
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title = "Raman analysis of in-plane biaxial strain for Ge-on-Si lasers",
abstract = "Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.",
author = "Bugeun Ki and Jiwoong Baek and Chulwon Lee and Cho, {Yong Hoon} and Jungwoo Oh",
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publisher = "Institute of Electrical and Electronics Engineers Inc.",
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Ki, B, Baek, J, Lee, C, Cho, YH & Oh, J 2016, Raman analysis of in-plane biaxial strain for Ge-on-Si lasers. in 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. vol. 1, 7375928, Institute of Electrical and Electronics Engineers Inc., 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Busan, Korea, Republic of, 15/8/24. https://doi.org/10.1109/CLEOPR.2015.7375928

Raman analysis of in-plane biaxial strain for Ge-on-Si lasers. / Ki, Bugeun; Baek, Jiwoong; Lee, Chulwon; Cho, Yong Hoon; Oh, Jungwoo.

2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2016. 7375928.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

AU - Ki, Bugeun

AU - Baek, Jiwoong

AU - Lee, Chulwon

AU - Cho, Yong Hoon

AU - Oh, Jungwoo

PY - 2016/1/7

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N2 - Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.

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Ki B, Baek J, Lee C, Cho YH, Oh J. Raman analysis of in-plane biaxial strain for Ge-on-Si lasers. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Vol. 1. Institute of Electrical and Electronics Engineers Inc. 2016. 7375928 https://doi.org/10.1109/CLEOPR.2015.7375928