Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

Bugeun Ki, Jiwoong Baek, Chulwon Lee, Yong Hoon Cho, Jungwoo Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.

Original languageEnglish
Title of host publication2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467371094
DOIs
Publication statusPublished - 2016 Jan 7
Event11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of
Duration: 2015 Aug 242015 Aug 28

Publication series

Name2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Volume1

Other

Other11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
CountryKorea, Republic of
CityBusan
Period15/8/2415/8/28

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Ki, B., Baek, J., Lee, C., Cho, Y. H., & Oh, J. (2016). Raman analysis of in-plane biaxial strain for Ge-on-Si lasers. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 [7375928] (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2015.7375928