We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (∼1.63 cm2 V-1 s-1), and a greatly enhanced on/off ratio (∼104). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain ∼12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.
|Number of pages||5|
|Journal||Journal of Materials Chemistry|
|Publication status||Published - 2010 Sept 21|
All Science Journal Classification (ASJC) codes
- Materials Chemistry