Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric

Ji Hyuk Choi, Sung Won Lee, Jyoti Prakash Kar, Sachindra Nath Das, Joohee Jeon, Kyeong Ju Moon, Tae Il Lee, Unyong Jeong, Jae Min Myoung

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30 Citations (Scopus)

Abstract

We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (∼1.63 cm2 V-1 s-1), and a greatly enhanced on/off ratio (∼104). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain ∼12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.

Original languageEnglish
Pages (from-to)7393-7397
Number of pages5
JournalJournal of Materials Chemistry
Volume20
Issue number35
DOIs
Publication statusPublished - 2010 Sep 21

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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    Choi, J. H., Lee, S. W., Kar, J. P., Das, S. N., Jeon, J., Moon, K. J., Lee, T. I., Jeong, U., & Myoung, J. M. (2010). Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric. Journal of Materials Chemistry, 20(35), 7393-7397. https://doi.org/10.1039/c0jm01313g