Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment

Sangwoo Shin, Beom Seok Kim, Jiwoon Song, Hwanseong Lee, Hyung Hee Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Artificial control of charged particles such as ions and molecules by external actions such as field-effect gating under nanofluidic environment is of critical technology for various promising applications such as protein control, DNA translocation, drug delivery, energy conversion, desalination, etc. In this regard, developing a facile method for fabrication of ionic field-effect transistors (iFET) over a large area may offer tremendous opportunities in fundamental research as well as innovative applications. Here, we report a rapid, cost-effective method to fabricate large-scale iFET. A simple, lithography-free two-step fabrication process which consists of sputtering and anodization was employed for fabricating large-scale iFET. A gate-all-around iFET with leak-free gate dielectric exhibited outstanding gating performance despite the large channel size. The combined gate-all-around structure with leak-free gate dielectric on a large area could yield possible breakthroughs in many areas ranging from biotechnology to energy and environmental applications.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
Publication statusPublished - 2012 Nov 22
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 2012 Aug 202012 Aug 23

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period12/8/2012/8/23

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment'. Together they form a unique fingerprint.

  • Cite this

    Shin, S., Kim, B. S., Song, J., Lee, H., & Cho, H. H. (2012). Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 [6322006] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2012.6322006