Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment

Sangwoo Shin, Beom Seok Kim, Jiwoon Song, Hwanseong Lee, Hyung Hee Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Artificial control of charged particles such as ions and molecules by external actions such as field-effect gating under nanofluidic environment is of critical technology for various promising applications such as protein control, DNA translocation, drug delivery, energy conversion, desalination, etc. In this regard, developing a facile method for fabrication of ionic field-effect transistors (iFET) over a large area may offer tremendous opportunities in fundamental research as well as innovative applications. Here, we report a rapid, cost-effective method to fabricate large-scale iFET. A simple, lithography-free two-step fabrication process which consists of sputtering and anodization was employed for fabricating large-scale iFET. A gate-all-around iFET with leak-free gate dielectric exhibited outstanding gating performance despite the large channel size. The combined gate-all-around structure with leak-free gate dielectric on a large area could yield possible breakthroughs in many areas ranging from biotechnology to energy and environmental applications.

Original languageEnglish
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
Publication statusPublished - 2012 Nov 22
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 2012 Aug 202012 Aug 23

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period12/8/2012/8/23

Fingerprint

Nanofluidics
Field effect transistors
field effect transistors
Ions
Fabrication
fabrication
Gate dielectrics
ions
Gates (transistor)
biotechnology
energy conversion
Desalination
Charged particles
Biotechnology
Drug delivery
Energy conversion
Lithography
Sputtering
delivery
charged particles

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Shin, S., Kim, B. S., Song, J., Lee, H., & Cho, H. H. (2012). Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 [6322006] https://doi.org/10.1109/NANO.2012.6322006
Shin, Sangwoo ; Kim, Beom Seok ; Song, Jiwoon ; Lee, Hwanseong ; Cho, Hyung Hee. / Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment. 2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 2012.
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Shin, S, Kim, BS, Song, J, Lee, H & Cho, HH 2012, Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment. in 2012 12th IEEE International Conference on Nanotechnology, NANO 2012., 6322006, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012, Birmingham, United Kingdom, 12/8/20. https://doi.org/10.1109/NANO.2012.6322006

Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment. / Shin, Sangwoo; Kim, Beom Seok; Song, Jiwoon; Lee, Hwanseong; Cho, Hyung Hee.

2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 2012. 6322006.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Shin S, Kim BS, Song J, Lee H, Cho HH. Rapid fabrication of leak-free, gate-all-around ionic field-effect transistor for control of ions in nanofluidic environment. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 2012. 6322006 https://doi.org/10.1109/NANO.2012.6322006