Rare-earth gate oxides for GaAs MOSFET application

Kwang Ho Kwon; Jun Kyu Yang; Hyung Ho Park; Jongdae Kim; Tae Moon Roh

doi:10.1016/j.apsusc.2006.03.056

Rare-earth gate oxides for GaAs MOSFET application

Kwang Ho Kwon, Jun Kyu Yang, Hyung Ho Park, Jongdae Kim, Tae Moon Roh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd ₂ O ₃ , (Gd _x La _1-x ) ₂ O ₃ , and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd ₂ O ₃ films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd ₂ O ₃ (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd ₂ O ₃ and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd _x La _1-x ) ₂ O ₃ (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO ₂ into Gd ₂ O ₃ . These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO ₂ . Energy band parameters such as ΔE _C , ΔE _V , and E _g were effectively controlled by the film composition.

Original language	English
Pages (from-to)	7624-7630
Number of pages	7
Journal	Applied Surface Science
Volume	252
Issue number	21
DOIs	https://doi.org/10.1016/j.apsusc.2006.03.056
Publication status	Published - 2006 Aug 31

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2004-041-D00431). The experiments at PLS were supported in part by MOST and POSTECH.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2006.03.056

Cite this

@article{2fcf110680a34f69ba07afc7b1d58269,

title = "Rare-earth gate oxides for GaAs MOSFET application",

abstract = " Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd 2 O 3 , (Gd x La 1-x ) 2 O 3 , and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd 2 O 3 films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd 2 O 3 (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd 2 O 3 and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd x La 1-x ) 2 O 3 (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO 2 into Gd 2 O 3 . These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO 2 . Energy band parameters such as ΔE C , ΔE V , and E g were effectively controlled by the film composition.",

author = "Kwon, {Kwang Ho} and Yang, {Jun Kyu} and Park, {Hyung Ho} and Jongdae Kim and Roh, {Tae Moon}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2004-041-D00431). The experiments at PLS were supported in part by MOST and POSTECH.",

year = "2006",

month = aug,

day = "31",

doi = "10.1016/j.apsusc.2006.03.056",

language = "English",

volume = "252",

pages = "7624--7630",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "21",

}

TY - JOUR

T1 - Rare-earth gate oxides for GaAs MOSFET application

AU - Kwon, Kwang Ho

AU - Yang, Jun Kyu

AU - Park, Hyung Ho

AU - Kim, Jongdae

AU - Roh, Tae Moon

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2004-041-D00431). The experiments at PLS were supported in part by MOST and POSTECH.

PY - 2006/8/31

Y1 - 2006/8/31

N2 - Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd 2 O 3 , (Gd x La 1-x ) 2 O 3 , and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd 2 O 3 films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd 2 O 3 (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd 2 O 3 and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd x La 1-x ) 2 O 3 (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO 2 into Gd 2 O 3 . These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO 2 . Energy band parameters such as ΔE C , ΔE V , and E g were effectively controlled by the film composition.

AB - Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd 2 O 3 , (Gd x La 1-x ) 2 O 3 , and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application. Gd 2 O 3 films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd 2 O 3 (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd 2 O 3 and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd x La 1-x ) 2 O 3 (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO 2 into Gd 2 O 3 . These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO 2 . Energy band parameters such as ΔE C , ΔE V , and E g were effectively controlled by the film composition.

UR - http://www.scopus.com/inward/record.url?scp=33747163020&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747163020&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2006.03.056

DO - 10.1016/j.apsusc.2006.03.056

M3 - Article

AN - SCOPUS:33747163020

SN - 0169-4332

VL - 252

SP - 7624

EP - 7630

JO - Applied Surface Science

JF - Applied Surface Science

IS - 21

ER -

Rare-earth gate oxides for GaAs MOSFET application

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this