RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100)

H. B. Kim, Mann-Ho Cho, S. W. Whangbo, C. N. Whang, S. C. Choi, W. K. Choi, J. H. Song, S. O. Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (Xmin) of the Y2O3 layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y2O3 film grown on Si(100) oriented with (110) direction and has a double domain structure. The (110) axis of Y2O3 layer is exactly parallel to the (100) axis of the Si substrate. It is also observed that the interface region of Y2O3 film has more crystalline defects than the surface region.

Original languageEnglish
Pages (from-to)169-172
Number of pages4
JournalThin Solid Films
Volume320
Issue number2
DOIs
Publication statusPublished - 1998 May 18

Fingerprint

Rutherford backscattering spectroscopy
Spectrometry
backscattering
Yttrium oxide
Substrates
spectroscopy
yttrium oxides
Crystalline materials
Defects
plots
defects
yttria
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, H. B., Cho, M-H., Whangbo, S. W., Whang, C. N., Choi, S. C., Choi, W. K., ... Kim, S. O. (1998). RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100). Thin Solid Films, 320(2), 169-172. https://doi.org/10.1016/S0040-6090(98)00364-2
Kim, H. B. ; Cho, Mann-Ho ; Whangbo, S. W. ; Whang, C. N. ; Choi, S. C. ; Choi, W. K. ; Song, J. H. ; Kim, S. O. / RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100). In: Thin Solid Films. 1998 ; Vol. 320, No. 2. pp. 169-172.
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Kim, HB, Cho, M-H, Whangbo, SW, Whang, CN, Choi, SC, Choi, WK, Song, JH & Kim, SO 1998, 'RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100)', Thin Solid Films, vol. 320, no. 2, pp. 169-172. https://doi.org/10.1016/S0040-6090(98)00364-2

RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100). / Kim, H. B.; Cho, Mann-Ho; Whangbo, S. W.; Whang, C. N.; Choi, S. C.; Choi, W. K.; Song, J. H.; Kim, S. O.

In: Thin Solid Films, Vol. 320, No. 2, 18.05.1998, p. 169-172.

Research output: Contribution to journalArticle

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T1 - RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100)

AU - Kim, H. B.

AU - Cho, Mann-Ho

AU - Whangbo, S. W.

AU - Whang, C. N.

AU - Choi, S. C.

AU - Choi, W. K.

AU - Song, J. H.

AU - Kim, S. O.

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AB - The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (Xmin) of the Y2O3 layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y2O3 film grown on Si(100) oriented with (110) direction and has a double domain structure. The (110) axis of Y2O3 layer is exactly parallel to the (100) axis of the Si substrate. It is also observed that the interface region of Y2O3 film has more crystalline defects than the surface region.

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