RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100)

H. B. Kim; M. H. Cho; S. W. Whangbo; C. N. Whang; S. C. Choi; W. K. Choi; J. H. Song; S. O. Kim

doi:10.1016/S0040-6090(98)00364-2

RBS/channeling studies on the heteroepitaxially grown Y₂O₃ film on Si( 100)

H. B. Kim, M. H. Cho, S. W. Whangbo, C. N. Whang, S. C. Choi, W. K. Choi, J. H. Song, S. O. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (X_min) of the Y₂O₃ layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y₂O₃ film grown on Si(100) oriented with (110) direction and has a double domain structure. The (110) axis of Y₂O₃ layer is exactly parallel to the (100) axis of the Si substrate. It is also observed that the interface region of Y₂O₃ film has more crystalline defects than the surface region.

Original language	English
Pages (from-to)	169-172
Number of pages	4
Journal	Thin Solid Films
Volume	320
Issue number	2
DOIs	https://doi.org/10.1016/S0040-6090(98)00364-2
Publication status	Published - 1998 May 18

Bibliographical note

Funding Information:
This work was supported in part by the Basic Science Research Institute Program, Ministry of Education, 1997, Project No. BSRI-97-2426, in part by the Korean Science and Engineering Foundation through the Atomic-scale Surface Science Research Center at Yonsei University, and also in part by Basic Researches for the Future (4-2N15960).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(98)00364-2

Cite this

@article{49c5d16201f64d01b94c61f5fe5b417f,

title = "RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100)",

abstract = "The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (Xmin) of the Y2O3 layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y2O3 film grown on Si(100) oriented with (110) direction and has a double domain structure. The (110) axis of Y2O3 layer is exactly parallel to the (100) axis of the Si substrate. It is also observed that the interface region of Y2O3 film has more crystalline defects than the surface region.",

author = "Kim, {H. B.} and Cho, {M. H.} and Whangbo, {S. W.} and Whang, {C. N.} and Choi, {S. C.} and Choi, {W. K.} and Song, {J. H.} and Kim, {S. O.}",

note = "Funding Information: This work was supported in part by the Basic Science Research Institute Program, Ministry of Education, 1997, Project No. BSRI-97-2426, in part by the Korean Science and Engineering Foundation through the Atomic-scale Surface Science Research Center at Yonsei University, and also in part by Basic Researches for the Future (4-2N15960).",

year = "1998",

month = may,

day = "18",

doi = "10.1016/S0040-6090(98)00364-2",

language = "English",

volume = "320",

pages = "169--172",

journal = "Thin Solid Films",

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T1 - RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100)

AU - Kim, H. B.

AU - Cho, M. H.

AU - Whangbo, S. W.

AU - Whang, C. N.

AU - Choi, S. C.

AU - Choi, W. K.

AU - Song, J. H.

AU - Kim, S. O.

N1 - Funding Information: This work was supported in part by the Basic Science Research Institute Program, Ministry of Education, 1997, Project No. BSRI-97-2426, in part by the Korean Science and Engineering Foundation through the Atomic-scale Surface Science Research Center at Yonsei University, and also in part by Basic Researches for the Future (4-2N15960).

PY - 1998/5/18

Y1 - 1998/5/18

N2 - The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (Xmin) of the Y2O3 layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y2O3 film grown on Si(100) oriented with (110) direction and has a double domain structure. The (110) axis of Y2O3 layer is exactly parallel to the (100) axis of the Si substrate. It is also observed that the interface region of Y2O3 film has more crystalline defects than the surface region.

AB - The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (Xmin) of the Y2O3 layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y2O3 film grown on Si(100) oriented with (110) direction and has a double domain structure. The (110) axis of Y2O3 layer is exactly parallel to the (100) axis of the Si substrate. It is also observed that the interface region of Y2O3 film has more crystalline defects than the surface region.

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