RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100)

H. B. Kim, M. H. Cho, S. W. Whangbo, C. N. Whang, S. C. Choi, W. K. Choi, J. H. Song, S. O. Kim

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Abstract

The heteroepitaxially grown yttrium oxide layer by an ionized cluster beam (ICB) on a Si(100) substrate was investigated by Rutherford backscattering spectrometry (RBS)/channeling. The channeling minimum value (Xmin) of the Y2O3 layer on Si(100) is 0.28, and this is the smallest value among those reported. From the channeling polar plots, it is found that Y2O3 film grown on Si(100) oriented with (110) direction and has a double domain structure. The (110) axis of Y2O3 layer is exactly parallel to the (100) axis of the Si substrate. It is also observed that the interface region of Y2O3 film has more crystalline defects than the surface region.

Original languageEnglish
Pages (from-to)169-172
Number of pages4
JournalThin Solid Films
Volume320
Issue number2
DOIs
Publication statusPublished - 1998 May 18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Kim, H. B., Cho, M. H., Whangbo, S. W., Whang, C. N., Choi, S. C., Choi, W. K., Song, J. H., & Kim, S. O. (1998). RBS/channeling studies on the heteroepitaxially grown Y2O3 film on Si( 100). Thin Solid Films, 320(2), 169-172. https://doi.org/10.1016/S0040-6090(98)00364-2