Reaction kinetics of poly-si etching in tmah solution

Taegun Park, Sangwoo Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study. The effect of water and TMAH concentration on the etching kinetics of poly-Si was investigated by using various concentrations of TMAH solution. It is found that H2O in TMAH solution plays an important role in etching poly-Si. Presence of dissolved CO2 and O2 in TMAH solution tends to inhibit etching of poly-Si. The concentration of dissolved CO2 and O2 in TMAH were reduced by Ar bubbling, thereby the poly-Si etching rate increased.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
EditorsPaul W. Mertens, Kurt Wostyn, Marc Meuris, Marc Heyns
PublisherTrans Tech Publications Ltd
Pages60-65
Number of pages6
ISBN (Print)9783035738018
DOIs
Publication statusPublished - 2021
Event15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 - Mechelen, Belgium
Duration: 2021 Apr 122021 Apr 15

Publication series

NameSolid State Phenomena
Volume314 SSP
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Conference

Conference15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
CountryBelgium
CityMechelen
Period21/4/1221/4/15

Bibliographical note

Publisher Copyright:
© 2021 Trans Tech Publications Ltd, Switzerland.

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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