Abstract
Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study. The effect of water and TMAH concentration on the etching kinetics of poly-Si was investigated by using various concentrations of TMAH solution. It is found that H2O in TMAH solution plays an important role in etching poly-Si. Presence of dissolved CO2 and O2 in TMAH solution tends to inhibit etching of poly-Si. The concentration of dissolved CO2 and O2 in TMAH were reduced by Ar bubbling, thereby the poly-Si etching rate increased.
| Original language | English |
|---|---|
| Title of host publication | Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 |
| Editors | Paul W. Mertens, Kurt Wostyn, Marc Meuris, Marc Heyns |
| Publisher | Trans Tech Publications Ltd |
| Pages | 60-65 |
| Number of pages | 6 |
| ISBN (Print) | 9783035738018 |
| DOIs | |
| Publication status | Published - 2021 |
| Event | 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 - Mechelen, Belgium Duration: 2021 Apr 12 → 2021 Apr 15 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Volume | 314 SSP |
| ISSN (Print) | 1012-0394 |
| ISSN (Electronic) | 1662-9779 |
Conference
| Conference | 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021 |
|---|---|
| Country/Territory | Belgium |
| City | Mechelen |
| Period | 21/4/12 → 21/4/15 |
Bibliographical note
Publisher Copyright:© 2021 Trans Tech Publications Ltd, Switzerland.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics