Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns

Seunggi Seo, Byung Chul Yeo, Sang Soo Han, Chang Mo Yoon, Joon Young Yang, Jonggeun Yoon, Choongkeun Yoo, Ho Jin Kim, Yong Baek Lee, Su Jeong Lee, Jae Min Myoung, Han Bo Ram Lee, Woo Hee Kim, Il Kwon Oh, Hyungjun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.

Original languageEnglish
Pages (from-to)41607-41617
Number of pages11
JournalACS Applied Materials and Interfaces
Volume9
Issue number47
DOIs
Publication statusPublished - 2017 Nov 29

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Atomic layer deposition
Self assembled monolayers
Thin films
Acids
Film growth
Oxidants
Nanotechnology
Partial pressure
Nucleation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Seo, Seunggi ; Yeo, Byung Chul ; Han, Sang Soo ; Yoon, Chang Mo ; Yang, Joon Young ; Yoon, Jonggeun ; Yoo, Choongkeun ; Kim, Ho Jin ; Lee, Yong Baek ; Lee, Su Jeong ; Myoung, Jae Min ; Lee, Han Bo Ram ; Kim, Woo Hee ; Oh, Il Kwon ; Kim, Hyungjun. / Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 47. pp. 41607-41617.
@article{68678f7fbcb34ed6bedb654f9b6b073e,
title = "Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns",
abstract = "The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.",
author = "Seunggi Seo and Yeo, {Byung Chul} and Han, {Sang Soo} and Yoon, {Chang Mo} and Yang, {Joon Young} and Jonggeun Yoon and Choongkeun Yoo and Kim, {Ho Jin} and Lee, {Yong Baek} and Lee, {Su Jeong} and Myoung, {Jae Min} and Lee, {Han Bo Ram} and Kim, {Woo Hee} and Oh, {Il Kwon} and Hyungjun Kim",
year = "2017",
month = "11",
day = "29",
doi = "10.1021/acsami.7b13365",
language = "English",
volume = "9",
pages = "41607--41617",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "47",

}

Seo, S, Yeo, BC, Han, SS, Yoon, CM, Yang, JY, Yoon, J, Yoo, C, Kim, HJ, Lee, YB, Lee, SJ, Myoung, JM, Lee, HBR, Kim, WH, Oh, IK & Kim, H 2017, 'Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns', ACS Applied Materials and Interfaces, vol. 9, no. 47, pp. 41607-41617. https://doi.org/10.1021/acsami.7b13365

Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns. / Seo, Seunggi; Yeo, Byung Chul; Han, Sang Soo; Yoon, Chang Mo; Yang, Joon Young; Yoon, Jonggeun; Yoo, Choongkeun; Kim, Ho Jin; Lee, Yong Baek; Lee, Su Jeong; Myoung, Jae Min; Lee, Han Bo Ram; Kim, Woo Hee; Oh, Il Kwon; Kim, Hyungjun.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 47, 29.11.2017, p. 41607-41617.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns

AU - Seo, Seunggi

AU - Yeo, Byung Chul

AU - Han, Sang Soo

AU - Yoon, Chang Mo

AU - Yang, Joon Young

AU - Yoon, Jonggeun

AU - Yoo, Choongkeun

AU - Kim, Ho Jin

AU - Lee, Yong Baek

AU - Lee, Su Jeong

AU - Myoung, Jae Min

AU - Lee, Han Bo Ram

AU - Kim, Woo Hee

AU - Oh, Il Kwon

AU - Kim, Hyungjun

PY - 2017/11/29

Y1 - 2017/11/29

N2 - The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.

AB - The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.

UR - http://www.scopus.com/inward/record.url?scp=85036464518&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85036464518&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b13365

DO - 10.1021/acsami.7b13365

M3 - Article

AN - SCOPUS:85036464518

VL - 9

SP - 41607

EP - 41617

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 47

ER -