The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.
Bibliographical noteFunding Information:
This work was funded by LG Display Co. and supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No. NRF-2014R1A2A1A11052588), the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (CISS-2016M3A6A69-30869), the Creative Materials Discovery Program through the National Research Foundation of Korea (NRF-2016M3D1A1-021140), and a KIST institutional project (No. 2E26130). And this work was supported (in part) by the Yonsei University Research Fund (Post Doc. Researcher Supporting Program) of 2016 (project no. 2016-12-0233).
© 2017 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)