Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system

Gi Bum Kim, Joon Seop Kwak, Hong Koo Baik, Sung Man Lee, Sang Ho Oh, Chan Gyung Park

Research output: Contribution to journalArticle

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Abstract

The role of the reaction between the capping layer and Co on the crystalline nature of CoSi2 films in refractory metal-capped Si/SiOx/Co system has been investigated. The epitaxial CoSi2 film was obtained in the capping layers (Ti, Zr) with high tendency of mixing between Co and the capping layer. Amorphous Ti-Co layer was produced at 450°C, and its thickness was increased at 550°C. The formation of amorphous Ti-Co layer during low-temperature annealing may be responsible for the formation of epitaxial CoSi2. Meanwhile, the polycrystalline CoSi2 was formed in the capping layer (Cr, Mo) with low tendency of mixing. These results can be explained by the fact that the mixing layer formed from the reaction between Co and refractory metal control the Co diffusion to the Si substrate as well as the thin SiOx between Co and Si.

Original languageEnglish
Pages (from-to)1443-1445
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number10
DOIs
Publication statusPublished - 2000 Sep 4

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refractory metals
tendencies
annealing
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Gi Bum ; Kwak, Joon Seop ; Baik, Hong Koo ; Lee, Sung Man ; Oh, Sang Ho ; Park, Chan Gyung. / Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system. In: Applied Physics Letters. 2000 ; Vol. 77, No. 10. pp. 1443-1445.
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abstract = "The role of the reaction between the capping layer and Co on the crystalline nature of CoSi2 films in refractory metal-capped Si/SiOx/Co system has been investigated. The epitaxial CoSi2 film was obtained in the capping layers (Ti, Zr) with high tendency of mixing between Co and the capping layer. Amorphous Ti-Co layer was produced at 450°C, and its thickness was increased at 550°C. The formation of amorphous Ti-Co layer during low-temperature annealing may be responsible for the formation of epitaxial CoSi2. Meanwhile, the polycrystalline CoSi2 was formed in the capping layer (Cr, Mo) with low tendency of mixing. These results can be explained by the fact that the mixing layer formed from the reaction between Co and refractory metal control the Co diffusion to the Si substrate as well as the thin SiOx between Co and Si.",
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Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system. / Kim, Gi Bum; Kwak, Joon Seop; Baik, Hong Koo; Lee, Sung Man; Oh, Sang Ho; Park, Chan Gyung.

In: Applied Physics Letters, Vol. 77, No. 10, 04.09.2000, p. 1443-1445.

Research output: Contribution to journalArticle

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T1 - Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system

AU - Kim, Gi Bum

AU - Kwak, Joon Seop

AU - Baik, Hong Koo

AU - Lee, Sung Man

AU - Oh, Sang Ho

AU - Park, Chan Gyung

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AB - The role of the reaction between the capping layer and Co on the crystalline nature of CoSi2 films in refractory metal-capped Si/SiOx/Co system has been investigated. The epitaxial CoSi2 film was obtained in the capping layers (Ti, Zr) with high tendency of mixing between Co and the capping layer. Amorphous Ti-Co layer was produced at 450°C, and its thickness was increased at 550°C. The formation of amorphous Ti-Co layer during low-temperature annealing may be responsible for the formation of epitaxial CoSi2. Meanwhile, the polycrystalline CoSi2 was formed in the capping layer (Cr, Mo) with low tendency of mixing. These results can be explained by the fact that the mixing layer formed from the reaction between Co and refractory metal control the Co diffusion to the Si substrate as well as the thin SiOx between Co and Si.

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