Reactive ion etching process of 4H-SiC using the CHF3/O2 mixtures and a post-O2 plasma-etching process

Soo Chang Kang, Moo Whan Shin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports on an effective RIE process of (4H, 6H)-SiC using a CHF3/O2 mixture. The experiments were conducted in three folds: a) using CHF3/O2 gas mixture only b) using CHF3/O2 gas mixture with a consecutive O2 plasma etching process and c) using SF6/O2 gas mixture without any extra processing. The etching characteristics from the different methods were examined and compared. Under the optimized etching conditions, the process using CHF3/O2 gas mixture with a consecutive O2 plasma etching process results in 750 Å/min for 4H-SiC of the etch rate and about 1.0 Å of surface roughness.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages949-952
Number of pages4
ISBN (Print)9780878498949
DOIs
Publication statusPublished - 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: 2001 Oct 282001 Nov 2

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period01/10/2801/11/2

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Kang, S. C., & Shin, M. W. (2002). Reactive ion etching process of 4H-SiC using the CHF3/O2 mixtures and a post-O2 plasma-etching process. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 949-952). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.949