Reactive metal contact at indium-tin-oxide/self-assembled monolayer interfaces

Jeong Ho Cho, Yeong Don Park, Do Hwan Kim, Woong Kwon Kim, Ho Won Jang, Jong Lam Lee, Kilwon Cho

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

With the aim of improving the electrical and adhesion properties of the indium-tin-oxide (ITO) electrode/organic interface, we tested Cl- and C F3 -terminated self-assembled monolayers (SAMs), which react with the indium atoms of the electrode, and compared the results to those obtained using a C H3 -terminated SAM. The contact resistance of the interface between the Cl-terminated surface and the ITO electrode (1.5 kΩ) was found to be much lower than that of the interface between the ITO and the C F3 -terminated surface (21.3 kΩ), which can be attributed to the higher dipole moment of the In-Cl complex compared to the In-F complex. In the ITO films deposited on the C H3 -terminated surface, the contact resistance (138.0 kΩ) was much higher than those of the reactive metal contacts because the ITO thin film deposited on the C H3 -terminated surface does not react with the SAM.

Original languageEnglish
Article number102104
JournalApplied Physics Letters
Volume88
Issue number10
DOIs
Publication statusPublished - 2006

Bibliographical note

Funding Information:
This work was supported by the National Research Laboratory Program and ERC Program (Grant No. R11-2003-006) of the MOST, a grant (No. F0004022) from the Information Display R&D Center under the 21st Century Frontier R&D Program and a grant (No. RT104-01-04) from the Regional Technology Innovation Program of the MOCIE, and the BK21 Program of the Ministry of Education and Human Resources Development of Korea, and the Pohang Accelerator Laboratory for providing the 4B1 beam line used in this study.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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