Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology

Hyunjung Shin, Seungbum Hong, Jooho Moon, Jong Up Jeon

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)


Information storage system that has a potentially ultrahigh storage density based on the principles of atomic force microscopy (AFM) has been developed. Micro-electro-mechanical systems (MEMS) technology plays a major role in integration and miniaturization of the standard AFM. Its potential application for ultrahigh storage density has been demonstrated by AFM with a piezoresponse mode to write and read information bits in ferroelectric Pb(ZrxTi1-x)O3 films. With this technique, bits as small as 40nm in diameter have been achieved, resulting in a data storage density of simply more than 200Gb/in2. Retention loss phenomenon has also been observed and investigated by AFM in the piezoresponse mode. Finally, local piezoelectric measurements of PZT films by different processing technologies are discussed in detail.

Original languageEnglish
Pages (from-to)103-110
Number of pages8
Issue number1-4
Publication statusPublished - 2002

Bibliographical note

Funding Information:
This work was supported partially by the Korean Ministry of Science and Technology through Creative Research Initiative (CRI) Program and National Research Laboratory (NRL). The authors would like to thank Prof. No’s research group for preparation of the sputtered PZT samples and helpful discussion.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation


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