A measurement technique for analyzing real-time plasma abnormality using optical emission spectroscopy (OES) is proposed to detect process uniformity during semiconductor processing. Among many measurement techniques, OES is a non-contact plasma measurement system for detecting process end points and plasma abnormality without influencing the process. Thus, this system can be widely used and utilized essentially in almost all tools for plasma processing. Despite easy installation and high utilization in plasma manufacturing tools, most OES systems are not able to detect real-time plasma uniformity. Therefore, the improved OES systems are required to overcome the limitations. In this paper, the measurement technique of the plasma light intensity in the left and right sides of a process chamber by a revolving module adapted to conventional OES in real time is investigated. This technique can be used to measure the plasma light in specific regions in the process chamber and detect real-time plasma process abnormalities by comparing light intensities from different regions.
Bibliographical noteFunding Information:
Manuscript received August 16, 2018; revised November 25, 2018; accepted November 29, 2018. Date of publication December 6, 2018; date of current version February 15, 2019. This work was supported by the Joint Program for Samsung Electronics-Yonsei University. The associate editor coordinating the review of this paper and approving it for publication was Dr. Ioannis Raptis. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: email@example.com; firstname.lastname@example.org). Digital Object Identifier 10.1109/JSEN.2018.2885349
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering