Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy

In Joong Kim; Chuntaek Park; Dongseok Shin; Ilgu Yun

doi:10.1109/JSEN.2020.3017506

Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy

In Joong Kim, Chuntaek Park, Dongseok Shin, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A real-time selective plasma light intensity measurement technique involving optical emission spectroscopy (OES) is proposed for process uniformity monitoring and detection in various plasma regions during semiconductor processing. Among plasma diagnostic techniques, OES is a noncontact plasma measurement technique for process end point and plasma abnormality detection that does not cause any process damage. Therefore, it is mostly used in all plasma-based tools. However, conventional OES systems are incapable of real-time plasma uniformity detection at specific OES sampling times, and therefore, there is a need for improving them. In this study, we show that selective plasma light intensity, including those on the left and right sides of a process chamber, can be measured with transparent-LCD-module-adapted conventional OES for determining process uniformity. The proposed technique can be used to measure the selective plasma light intensity in specific regions of the process chamber, such as the center and edge regions of a wafer, and to thereby analyze the plasma process uniformity.

Original language	English
Article number	9170607
Pages (from-to)	2256-2262
Number of pages	7
Journal	IEEE Sensors Journal
Volume	21
Issue number	2
DOIs	https://doi.org/10.1109/JSEN.2020.3017506
Publication status	Published - 2021 Jan 15

Bibliographical note

Funding Information:
Manuscript received July 12, 2020; revised August 10, 2020; accepted August 12, 2020. Date of publication August 18, 2020; date of current version December 16, 2020. This work was supported by the Joint Program for Samsung Electronics-Yonsei University. The associate editor coordinating the review of this article and approving it for publication was Dr. Ioannis Raptis. (Corresponding author: Ilgu Yun.) In Joong Kim and Dongseok Shin were with the Department of Electrical Engineering, Yonsei University, Seoul 03722, South Korea. They are now with Samsung Electronics, Hwaseong, South Korea (e-mail: kiminjoong@yonsei.ac.kr; nathan89@yonsei.ac.kr).

Funding Information:
This work was supported by the Joint Programfor SamsungElectronics-Yonsei University.

Publisher Copyright:
© 2001-2012 IEEE.

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/JSEN.2020.3017506

Cite this

@article{dc73f87e6d33483e86dafd611c5fd5dd,

title = "Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy",

abstract = "A real-time selective plasma light intensity measurement technique involving optical emission spectroscopy (OES) is proposed for process uniformity monitoring and detection in various plasma regions during semiconductor processing. Among plasma diagnostic techniques, OES is a noncontact plasma measurement technique for process end point and plasma abnormality detection that does not cause any process damage. Therefore, it is mostly used in all plasma-based tools. However, conventional OES systems are incapable of real-time plasma uniformity detection at specific OES sampling times, and therefore, there is a need for improving them. In this study, we show that selective plasma light intensity, including those on the left and right sides of a process chamber, can be measured with transparent-LCD-module-adapted conventional OES for determining process uniformity. The proposed technique can be used to measure the selective plasma light intensity in specific regions of the process chamber, such as the center and edge regions of a wafer, and to thereby analyze the plasma process uniformity.",

author = "Kim, {In Joong} and Chuntaek Park and Dongseok Shin and Ilgu Yun",

note = "Funding Information: Manuscript received July 12, 2020; revised August 10, 2020; accepted August 12, 2020. Date of publication August 18, 2020; date of current version December 16, 2020. This work was supported by the Joint Program for Samsung Electronics-Yonsei University. The associate editor coordinating the review of this article and approving it for publication was Dr. Ioannis Raptis. (Corresponding author: Ilgu Yun.) In Joong Kim and Dongseok Shin were with the Department of Electrical Engineering, Yonsei University, Seoul 03722, South Korea. They are now with Samsung Electronics, Hwaseong, South Korea (e-mail: kiminjoong@yonsei.ac.kr; nathan89@yonsei.ac.kr). Funding Information: This work was supported by the Joint Programfor SamsungElectronics-Yonsei University. Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2021",

month = jan,

day = "15",

doi = "10.1109/JSEN.2020.3017506",

language = "English",

volume = "21",

pages = "2256--2262",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy

AU - Kim, In Joong

AU - Park, Chuntaek

AU - Shin, Dongseok

AU - Yun, Ilgu

N1 - Funding Information: Manuscript received July 12, 2020; revised August 10, 2020; accepted August 12, 2020. Date of publication August 18, 2020; date of current version December 16, 2020. This work was supported by the Joint Program for Samsung Electronics-Yonsei University. The associate editor coordinating the review of this article and approving it for publication was Dr. Ioannis Raptis. (Corresponding author: Ilgu Yun.) In Joong Kim and Dongseok Shin were with the Department of Electrical Engineering, Yonsei University, Seoul 03722, South Korea. They are now with Samsung Electronics, Hwaseong, South Korea (e-mail: kiminjoong@yonsei.ac.kr; nathan89@yonsei.ac.kr). Funding Information: This work was supported by the Joint Programfor SamsungElectronics-Yonsei University. Publisher Copyright: © 2001-2012 IEEE.

PY - 2021/1/15

Y1 - 2021/1/15

N2 - A real-time selective plasma light intensity measurement technique involving optical emission spectroscopy (OES) is proposed for process uniformity monitoring and detection in various plasma regions during semiconductor processing. Among plasma diagnostic techniques, OES is a noncontact plasma measurement technique for process end point and plasma abnormality detection that does not cause any process damage. Therefore, it is mostly used in all plasma-based tools. However, conventional OES systems are incapable of real-time plasma uniformity detection at specific OES sampling times, and therefore, there is a need for improving them. In this study, we show that selective plasma light intensity, including those on the left and right sides of a process chamber, can be measured with transparent-LCD-module-adapted conventional OES for determining process uniformity. The proposed technique can be used to measure the selective plasma light intensity in specific regions of the process chamber, such as the center and edge regions of a wafer, and to thereby analyze the plasma process uniformity.

AB - A real-time selective plasma light intensity measurement technique involving optical emission spectroscopy (OES) is proposed for process uniformity monitoring and detection in various plasma regions during semiconductor processing. Among plasma diagnostic techniques, OES is a noncontact plasma measurement technique for process end point and plasma abnormality detection that does not cause any process damage. Therefore, it is mostly used in all plasma-based tools. However, conventional OES systems are incapable of real-time plasma uniformity detection at specific OES sampling times, and therefore, there is a need for improving them. In this study, we show that selective plasma light intensity, including those on the left and right sides of a process chamber, can be measured with transparent-LCD-module-adapted conventional OES for determining process uniformity. The proposed technique can be used to measure the selective plasma light intensity in specific regions of the process chamber, such as the center and edge regions of a wafer, and to thereby analyze the plasma process uniformity.

UR - http://www.scopus.com/inward/record.url?scp=85098219125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85098219125&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2020.3017506

DO - 10.1109/JSEN.2020.3017506

M3 - Article

AN - SCOPUS:85098219125

SN - 1530-437X

VL - 21

SP - 2256

EP - 2262

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 2

M1 - 9170607

ER -

Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this