Applicable flexible electronics, particularly flexible displays, have been developed for next-generation devices in recent years. Sol-gel processing, for example, which uses low-temperature annealing, is a promising technique. This review article focuses on recent advances in achieving low-temperature, solution-processed oxide thin-film transistors (TFTs) through chemical and physical approaches. First, chemical approaches were overviewed in terms of solute and solvent engineering. Second, physical approaches were summarized that some researchers added energy resources except heat on the conventional sol-gel process. The additional energy sources involve microwave annealing, high-pressure annealing, and ultraviolet irradiation. This review article offers an overview of these techniques introduced in details. From these efforts, metal-oxide TFTs can be fabricated at 150°C maintaining their device performance.
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10041808, Synthesis of Oxide Semiconductor and Insulator Ink Materials and Process Development for Printed Backplane of Flexible Displays Processed Below 150◦C) funded by the Ministry of Knowledge Economy (MKE, Korea).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Electrical and Electronic Engineering