Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Jang Yeon Kwon, Jae Kyeong Jeong

Research output: Contribution to journalReview article

80 Citations (Scopus)

Abstract

This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed.

Original languageEnglish
Article number024002
JournalSemiconductor Science and Technology
Volume30
Issue number2
DOIs
Publication statusPublished - 2015 Feb 1

Fingerprint

Thin film transistors
Oxides
Oxide films
Transition metals
metal oxides
transistors
transition metals
thin films
Flexible displays
Flat panel displays
flat panel displays
Ohmic contacts
oxynitrides
composite structures
Organic light emitting diodes (OLED)
Composite structures
Chemical analysis
Liquid crystal displays
artifacts
Zinc

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed.",
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Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors. / Yeon Kwon, Jang; Kyeong Jeong, Jae.

In: Semiconductor Science and Technology, Vol. 30, No. 2, 024002, 01.02.2015.

Research output: Contribution to journalReview article

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