Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices

Jaewoo Shim, Dong Ho Kang, Yunjo Kim, Hyun Kum, Wei Kong, Sang Hoon Bae, Ibraheem Almansouri, Kyusang Lee, Jin Hong Park, Jeehwan Kim

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

The rediscovery of graphene in 2004 triggered an explosive expansion of research on various van der Waals (vdW) materials. The atomic layers of these vdW materials do not have surface crystal defects and are bonded by weak vdW interactions, thus the vdW materials can be stacked onto each other to form vdW heterojunction structures without needing to consider the lattice mismatch issue. In addition, the broad library of vdW materials makes it possible to design diverse types of heterojunctions with a wide range of band alignments, bandgaps, and electron affinities. Vertical vdW heterostructures especially offer numerous possibilities for the realization of high-performance electronic and optoelectronic devices. Therefore, these vdW heterostructures have received significant attention, and extensive relevant experimental results have been reported in the past few years. In this review, we first introduce the transfer techniques to form vdW heterojunction structures. Next, we discuss recent progress in vdW heterostructure-based electronic and optoelectronic devices, including vertical field effect transistors, negative differential resistance devices, memories, photodetectors, photovoltaic devices, and light-emitting diodes. Finally, we conclude this review by discussing the current challenges facing vdW heterojunction structure-based devices and our perspective on future research directions.

Original languageEnglish
Pages (from-to)78-89
Number of pages12
JournalCarbon
Volume133
DOIs
Publication statusPublished - 2018 Jul

Bibliographical note

Funding Information:
J. S. and D.-H. K. were supported for this work by the National Research Foundation of Korea funded by the Korea government (MSIP) (No: 2015R1A2A2A01002965 , 2015M3A7B7045496 , 2016M3A7B4910426 and 2017R1A4A1015400 ), the Future Semiconductor Device Technology Development Program funded by Korea government (MOTIE) and Korea Semiconductor Research Consortium (KSRC) (No: 10067739 ). Y. Kim was supported by the One to One Joint Research Project of the MI/MIT Cooperative Program.

Publisher Copyright:
© 2018 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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