Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

Won Sang Lee, Yoon Ho Choi, Ki Woong Chung, Moo Whan Shin, Dong Chan Moon

Research output: Contribution to journalConference article

Abstract

A new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 angstrom/min under the Hg illumination of 35 mW/cm2. The MESFET saturates at VDS = 4 V and pinches off at VGS = -3 V. The maximum drain current of the device is 230 mA/mm at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

Original languageEnglish
Pages (from-to)481-487
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume572
Publication statusPublished - 1999 Dec 1

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Etching
field effect transistors
Lighting
etching
Electrochemical etching
Drain current
Photoresists
illumination
Ionization
etchants
Activation energy
Doping (additives)
masking
photoresists
Thin films
Defects
activation energy
ionization
sensitivity
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, Won Sang ; Choi, Yoon Ho ; Chung, Ki Woong ; Shin, Moo Whan ; Moon, Dong Chan. / Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process. In: Materials Research Society Symposium - Proceedings. 1999 ; Vol. 572. pp. 481-487.
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Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process. / Lee, Won Sang; Choi, Yoon Ho; Chung, Ki Woong; Shin, Moo Whan; Moon, Dong Chan.

In: Materials Research Society Symposium - Proceedings, Vol. 572, 01.12.1999, p. 481-487.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

AU - Lee, Won Sang

AU - Choi, Yoon Ho

AU - Chung, Ki Woong

AU - Shin, Moo Whan

AU - Moon, Dong Chan

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 angstrom/min under the Hg illumination of 35 mW/cm2. The MESFET saturates at VDS = 4 V and pinches off at VGS = -3 V. The maximum drain current of the device is 230 mA/mm at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

AB - A new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 angstrom/min under the Hg illumination of 35 mW/cm2. The MESFET saturates at VDS = 4 V and pinches off at VGS = -3 V. The maximum drain current of the device is 230 mA/mm at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

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