Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

Won Sang Lee; Yoon Ho Choi; Ki Woong Chung; Moo Whan Shin; Dong Chan Moon

doi:10.1557/proc-572-481

Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

Won Sang Lee, Yoon Ho Choi, Ki Woong Chung, Moo Whan Shin, Dong Chan Moon

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 angstrom/min under the Hg illumination of 35 mW/cm². The MESFET saturates at V_DS = 4 V and pinches off at V_GS = -3 V. The maximum drain current of the device is 230 mA/mm at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, f_T and f_max, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

Original language	English
Pages (from-to)	481-487
Number of pages	7
Journal	Materials Research Society Symposium - Proceedings
Volume	572
DOIs	https://doi.org/10.1557/proc-572-481
Publication status	Published - 1999
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA Duration: 1999 Apr 5 → 1999 Apr 8

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process",

abstract = "A new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 angstrom/min under the Hg illumination of 35 mW/cm2. The MESFET saturates at VDS = 4 V and pinches off at VGS = -3 V. The maximum drain current of the device is 230 mA/mm at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.",

author = "Lee, {Won Sang} and Choi, {Yoon Ho} and Chung, {Ki Woong} and Shin, {Moo Whan} and Moon, {Dong Chan}",

year = "1999",

doi = "10.1557/proc-572-481",

language = "English",

volume = "572",

pages = "481--487",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' ; Conference date: 05-04-1999 Through 08-04-1999",

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TY - JOUR

T1 - Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

AU - Lee, Won Sang

AU - Choi, Yoon Ho

AU - Chung, Ki Woong

AU - Shin, Moo Whan

AU - Moon, Dong Chan

PY - 1999

Y1 - 1999

N2 - A new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 angstrom/min under the Hg illumination of 35 mW/cm2. The MESFET saturates at VDS = 4 V and pinches off at VGS = -3 V. The maximum drain current of the device is 230 mA/mm at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

AB - A new photo-electrochemical etching method was developed and used to fabricate GaN MESFETs. The etching process uses photoresist for masking illumination and the etchant is KOH based. The etching rate with 1.0 mol% of KOH for n-GaN is as high as 1600 angstrom/min under the Hg illumination of 35 mW/cm2. The MESFET saturates at VDS = 4 V and pinches off at VGS = -3 V. The maximum drain current of the device is 230 mA/mm at 300 K and the value is remained almost same for 500 K operation. The characteristic frequencies, fT and fmax, are 6.35 GHz and 10.25 GHz, respectively. Insensitivity of the device performance to temperature was attributed to the defect-related high activation energy of dopants for ionization and band-bending at the subgrain boundaries in GaN thin films.

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DO - 10.1557/proc-572-481

M3 - Conference article

AN - SCOPUS:0033340321

SN - 0272-9172

VL - 572

SP - 481

EP - 487

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'

Y2 - 5 April 1999 through 8 April 1999

ER -

Recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

Abstract

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