Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies

Seung Young Seo, Gunho Moon, Odongo F.N. Okello, Min Yeong Park, Cheolhee Han, Soonyoung Cha, Hyunyong Choi, Han Woong Yeom, Si Young Choi, Jewook Park, Moon Ho Jo

Research output: Contribution to journalArticlepeer-review

Abstract

Two-dimensional semiconductors have a range of electronic and optical properties that can be used in the development of advanced electronic devices. However, unlike conventional silicon semiconductors, simple doping methods to monolithically assemble n- and p-type channels on a single two-dimensional semiconductor are lacking, which makes the fabrication of integrated circuitry challenging. Here we report the reversible photo-induced doping of few-layer molybdenum ditelluride and tungsten diselenide, where the channel polarity can be reconfigured from n-type to p-type, and vice versa, with laser light at different frequencies. This reconfigurable doping is attributed to selective light–lattice interactions, such as the formation of tellurium self-interstitial defects under ultraviolet illumination and the incorporation of substitutional oxygen in tellurium and molybdenum vacancies under visible illumination. Using this approach, we create a complementary metal–oxide–semiconductor (CMOS) device on a single channel, where the circuit functions can be dynamically reset from a CMOS inverter to a CMOS switch using pulses of different light frequencies.

Original languageEnglish
Pages (from-to)38-44
Number of pages7
JournalNature Electronics
Volume4
Issue number1
DOIs
Publication statusPublished - 2021 Jan

Bibliographical note

Funding Information:
This work was supported by the Institute for Basic Science (IBS), Korea, under project code IBS-R014-A1.

Publisher Copyright:
© 2020, The Author(s), under exclusive licence to Springer Nature Limited.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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