Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 μC cm2 was obtained after annealing up to 185 °C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (∼150 °C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field.
Bibliographical noteFunding Information:
This project was supported by The National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Commerce, Industry and Energy. Samsung Electronics, Co., Ltd. The x-ray experiments at PAL (4C2 beamline, Korea) were supported by MOST and POSCO, Korea. This work was supported by Seoul Science Foundation and the Second Stage of Brain Korea 21 Project in 2006.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)