Recovery of silicon surface after reactive ion etching of SiO2 using CHF3/C2F6 plasma

Kwang Ho Kwon, Hyung-Ho Park, Kyung Soo Kim, Chang II Kim, Yung Kwon Sung

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effects of SF6 or NF3 gas plasma and subsequent rapid thermal anneal (RTA) treatment for the recovery of modified silicon surfaces after reactive ion etching (RIE) with CHF3/C2F6 plasma were investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. NF3 or SF3 plasma treatment effectively removed the residue layer and impurities in the silicon substrate were removed by the subsequent RTA treatment at 700°C. The effects of NF3 or SF6 plasma and the additional RTA treatment in recovering the reactive ion etched silicon surface were also studied by measuring the leakage current densities and the barrier heights of posttreated PtSi/n-type Si Schottky barrier diodes. The minimum leakage current and the maximum barrier height were obtained after NF3 plasma and subsequent RTA treatment, which constitute the most probable recovery process for silicon surfaces contaminated by RIE.

Original languageEnglish
Pages (from-to)1611-1616
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number3
Publication statusPublished - 1996 Mar 1

Fingerprint

Reactive ion etching
recovery
etching
Plasmas
Recovery
Silicon
Heat treatment
silicon
ions
Leakage currents
leakage
Schottky barrier diodes
Secondary ion mass spectrometry
Schottky diodes
secondary ion mass spectrometry
Current density
X ray photoelectron spectroscopy
photoelectron spectroscopy
Impurities
current density

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "The effects of SF6 or NF3 gas plasma and subsequent rapid thermal anneal (RTA) treatment for the recovery of modified silicon surfaces after reactive ion etching (RIE) with CHF3/C2F6 plasma were investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. NF3 or SF3 plasma treatment effectively removed the residue layer and impurities in the silicon substrate were removed by the subsequent RTA treatment at 700°C. The effects of NF3 or SF6 plasma and the additional RTA treatment in recovering the reactive ion etched silicon surface were also studied by measuring the leakage current densities and the barrier heights of posttreated PtSi/n-type Si Schottky barrier diodes. The minimum leakage current and the maximum barrier height were obtained after NF3 plasma and subsequent RTA treatment, which constitute the most probable recovery process for silicon surfaces contaminated by RIE.",
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Recovery of silicon surface after reactive ion etching of SiO2 using CHF3/C2F6 plasma. / Kwon, Kwang Ho; Park, Hyung-Ho; Kim, Kyung Soo; Kim, Chang II; Sung, Yung Kwon.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 3, 01.03.1996, p. 1611-1616.

Research output: Contribution to journalArticle

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AB - The effects of SF6 or NF3 gas plasma and subsequent rapid thermal anneal (RTA) treatment for the recovery of modified silicon surfaces after reactive ion etching (RIE) with CHF3/C2F6 plasma were investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. NF3 or SF3 plasma treatment effectively removed the residue layer and impurities in the silicon substrate were removed by the subsequent RTA treatment at 700°C. The effects of NF3 or SF6 plasma and the additional RTA treatment in recovering the reactive ion etched silicon surface were also studied by measuring the leakage current densities and the barrier heights of posttreated PtSi/n-type Si Schottky barrier diodes. The minimum leakage current and the maximum barrier height were obtained after NF3 plasma and subsequent RTA treatment, which constitute the most probable recovery process for silicon surfaces contaminated by RIE.

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