Abstract
The effects of SF6 or NF3 gas plasma and subsequent rapid thermal anneal (RTA) treatment for the recovery of modified silicon surfaces after reactive ion etching (RIE) with CHF3/C2F6 plasma were investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. NF3 or SF3 plasma treatment effectively removed the residue layer and impurities in the silicon substrate were removed by the subsequent RTA treatment at 700°C. The effects of NF3 or SF6 plasma and the additional RTA treatment in recovering the reactive ion etched silicon surface were also studied by measuring the leakage current densities and the barrier heights of posttreated PtSi/n-type Si Schottky barrier diodes. The minimum leakage current and the maximum barrier height were obtained after NF3 plasma and subsequent RTA treatment, which constitute the most probable recovery process for silicon surfaces contaminated by RIE.
| Original language | English |
|---|---|
| Pages (from-to) | 1611-1616 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 35 |
| Issue number | 3 |
| Publication status | Published - 1996 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Recovery of silicon surface after reactive ion etching of SiO2 using CHF3/C2F6 plasma. / Kwon, Kwang Ho; Park, Hyung-Ho; Kim, Kyung Soo; Kim, Chang II; Sung, Yung Kwon.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 3, 01.03.1996, p. 1611-1616.Research output: Contribution to journal › Article
TY - JOUR
T1 - Recovery of silicon surface after reactive ion etching of SiO2 using CHF3/C2F6 plasma
AU - Kwon, Kwang Ho
AU - Park, Hyung-Ho
AU - Kim, Kyung Soo
AU - Kim, Chang II
AU - Sung, Yung Kwon
PY - 1996/3/1
Y1 - 1996/3/1
N2 - The effects of SF6 or NF3 gas plasma and subsequent rapid thermal anneal (RTA) treatment for the recovery of modified silicon surfaces after reactive ion etching (RIE) with CHF3/C2F6 plasma were investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. NF3 or SF3 plasma treatment effectively removed the residue layer and impurities in the silicon substrate were removed by the subsequent RTA treatment at 700°C. The effects of NF3 or SF6 plasma and the additional RTA treatment in recovering the reactive ion etched silicon surface were also studied by measuring the leakage current densities and the barrier heights of posttreated PtSi/n-type Si Schottky barrier diodes. The minimum leakage current and the maximum barrier height were obtained after NF3 plasma and subsequent RTA treatment, which constitute the most probable recovery process for silicon surfaces contaminated by RIE.
AB - The effects of SF6 or NF3 gas plasma and subsequent rapid thermal anneal (RTA) treatment for the recovery of modified silicon surfaces after reactive ion etching (RIE) with CHF3/C2F6 plasma were investigated using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. NF3 or SF3 plasma treatment effectively removed the residue layer and impurities in the silicon substrate were removed by the subsequent RTA treatment at 700°C. The effects of NF3 or SF6 plasma and the additional RTA treatment in recovering the reactive ion etched silicon surface were also studied by measuring the leakage current densities and the barrier heights of posttreated PtSi/n-type Si Schottky barrier diodes. The minimum leakage current and the maximum barrier height were obtained after NF3 plasma and subsequent RTA treatment, which constitute the most probable recovery process for silicon surfaces contaminated by RIE.
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M3 - Article
AN - SCOPUS:0030103501
VL - 35
SP - 1611
EP - 1616
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3
ER -