Recrystallization of Ge thin film on SiO 2 substrates using a two-step annealing process

Sung Wook Kim, Jaejun Lee, Youn Ho Park, Jeong Min Park, Hong Kyeong Do, Yeon Joo Kim, Heon-Jin Choi

Research output: Contribution to journalArticle

Abstract

The fabrication of high-quality crystalline germanium thin films (GeTF) on an amorphous SiO 2 layer is crucial for the realization of high performance-, low cost III-V solar cells used in many applications. Herein, we report the growth of a high-quality crystalline GeTF on SiO 2 /Si substrates using an ultra-vacuum chemical vapor deposition (UHV-CVD) method. GeTF was grown on the SiO 2 layer using a two-step growth and multi-annealing processes. The fabrication method involved the deposition of a 1 st seeding layer, annealing, and deposition of a 2 nd main layer followed by three times of cyclic annealing. The crystallization of the seeding layer having a thickness of less than 10 nm could be ascribed to the evolution of polycrystalline structures in the main layer. The cyclic annealing performed after the deposition of the main layer is also found to be crucial for the formation of single crystalline, high-quality Ge films on SiO 2 substrates with <311> direction. The cyclic annealing results in a further reduction of the defects, thereby threading dislocations significantly to a density of ~ 5.311 × 10 7 cm −2 . Electrical measurements using the van der Pauw method revealed that the GeTF exhibits p-type characteristics and a high mobility of 360.10 cm 2 /Vs at room temperature. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)51-56
Number of pages6
JournalElectronic Materials Letters
Volume13
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1

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Germanium
Annealing
Thin films
Substrates
Crystalline materials
Chemical vapor deposition
Fabrication
Crystallization
Solar cells
Vacuum
Defects
Costs
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, Sung Wook ; Lee, Jaejun ; Park, Youn Ho ; Park, Jeong Min ; Do, Hong Kyeong ; Kim, Yeon Joo ; Choi, Heon-Jin. / Recrystallization of Ge thin film on SiO 2 substrates using a two-step annealing process In: Electronic Materials Letters. 2017 ; Vol. 13, No. 1. pp. 51-56.
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Recrystallization of Ge thin film on SiO 2 substrates using a two-step annealing process . / Kim, Sung Wook; Lee, Jaejun; Park, Youn Ho; Park, Jeong Min; Do, Hong Kyeong; Kim, Yeon Joo; Choi, Heon-Jin.

In: Electronic Materials Letters, Vol. 13, No. 1, 01.01.2017, p. 51-56.

Research output: Contribution to journalArticle

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AB - The fabrication of high-quality crystalline germanium thin films (GeTF) on an amorphous SiO 2 layer is crucial for the realization of high performance-, low cost III-V solar cells used in many applications. Herein, we report the growth of a high-quality crystalline GeTF on SiO 2 /Si substrates using an ultra-vacuum chemical vapor deposition (UHV-CVD) method. GeTF was grown on the SiO 2 layer using a two-step growth and multi-annealing processes. The fabrication method involved the deposition of a 1 st seeding layer, annealing, and deposition of a 2 nd main layer followed by three times of cyclic annealing. The crystallization of the seeding layer having a thickness of less than 10 nm could be ascribed to the evolution of polycrystalline structures in the main layer. The cyclic annealing performed after the deposition of the main layer is also found to be crucial for the formation of single crystalline, high-quality Ge films on SiO 2 substrates with <311> direction. The cyclic annealing results in a further reduction of the defects, thereby threading dislocations significantly to a density of ~ 5.311 × 10 7 cm −2 . Electrical measurements using the van der Pauw method revealed that the GeTF exhibits p-type characteristics and a high mobility of 360.10 cm 2 /Vs at room temperature. [Figure not available: see fulltext.]

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