Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the Ni-InGaAs/n-In0.53Ga0.47As junction was well formed without penetration of Ni-InGaAs into the In0.53Ga0.47As substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering