Reducing contact resistance between Ni-InGaAs and n-In 0.53 Ga 0.47 as using sn interlayer in n-In 0.53 Ga 0.47 as MOSFETs

Meng Li, Geonho Shin, Jeongchan Lee, Seung Min Lee, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalArticle

Abstract

Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the Ni-InGaAs/n-In 0.53 Ga 0.47 As junction was well formed without penetration of Ni-InGaAs into the In 0.53 Ga 0.47 As substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.

Original languageEnglish
Pages (from-to)301-306
Number of pages6
JournalJournal of Semiconductor Technology and Science
Volume18
Issue number3
DOIs
Publication statusPublished - 2018 Jun 1

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Contact resistance
Rapid thermal annealing
MOSFET devices
Sputtering
Etching
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Reducing contact resistance between Ni-InGaAs and n-In 0.53 Ga 0.47 as using sn interlayer in n-In 0.53 Ga 0.47 as MOSFETs",
abstract = "Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the Ni-InGaAs/n-In 0.53 Ga 0.47 As junction was well formed without penetration of Ni-InGaAs into the In 0.53 Ga 0.47 As substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.",
author = "Meng Li and Geonho Shin and Jeongchan Lee and Lee, {Seung Min} and Jungwoo Oh and Lee, {Hi Deok}",
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Reducing contact resistance between Ni-InGaAs and n-In 0.53 Ga 0.47 as using sn interlayer in n-In 0.53 Ga 0.47 as MOSFETs . / Li, Meng; Shin, Geonho; Lee, Jeongchan; Lee, Seung Min; Oh, Jungwoo; Lee, Hi Deok.

In: Journal of Semiconductor Technology and Science, Vol. 18, No. 3, 01.06.2018, p. 301-306.

Research output: Contribution to journalArticle

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AU - Shin, Geonho

AU - Lee, Jeongchan

AU - Lee, Seung Min

AU - Oh, Jungwoo

AU - Lee, Hi Deok

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AB - Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the Ni-InGaAs/n-In 0.53 Ga 0.47 As junction was well formed without penetration of Ni-InGaAs into the In 0.53 Ga 0.47 As substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.

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