Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the Ni-InGaAs/n-In0.53Ga0.47As junction was well formed without penetration of Ni-InGaAs into the In0.53Ga0.47As substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.
Bibliographical noteFunding Information:
This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analysis, and the National NanoFab Center (NNFC) in Daejeon for the SIMS analysis.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering