Reducing dislocation density by sequential implantation of Ge and in Si

Seongil Im, Jack Washburn, Ronald Gronsky, Nathan W. Cheung, Kin Man Yu, Joel W. Ager

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
PublisherPubl by Materials Research Society
Pages139-143
Number of pages5
ISBN (Print)1558991948
Publication statusPublished - 1993 Dec 1
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 14

Publication series

NameMaterials Research Society Symposium Proceedings
Volume298
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period93/4/1293/4/14

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Im, S., Washburn, J., Gronsky, R., Cheung, N. W., Yu, K. M., & Ager, J. W. (1993). Reducing dislocation density by sequential implantation of Ge and in Si. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (pp. 139-143). (Materials Research Society Symposium Proceedings; Vol. 298). Publ by Materials Research Society.