Reducing dislocation density by sequential implantation of Ge and in Si

Seongil Im; Jack Washburn; Ronald Gronsky; Nathan W. Cheung; Kin Man Yu; Joel W. Ager

Reducing dislocation density by sequential implantation of Ge and in Si

Seongil Im, Jack Washburn, Ronald Gronsky, Nathan W. Cheung, Kin Man Yu, Joel W. Ager

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Carbon implantation was performed after high dose (5×10¹⁶/cm²) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Editors	M.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
Publisher	Publ by Materials Research Society
Pages	139-143
Number of pages	5
ISBN (Print)	1558991948
Publication status	Published - 1993
Event	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: 1993 Apr 12 → 1993 Apr 14

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	298
ISSN (Print)	0272-9172

Other

Other	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials
City	San Francisco, CA, USA
Period	93/4/12 → 93/4/14

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Im, S., Washburn, J., Gronsky, R., Cheung, N. W., Yu, K. M., & Ager, J. W. (1993). Reducing dislocation density by sequential implantation of Ge and in Si. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (pp. 139-143). (Materials Research Society Symposium Proceedings; Vol. 298). Publ by Materials Research Society.

Im, Seongil ; Washburn, Jack ; Gronsky, Ronald ; Cheung, Nathan W. ; Yu, Kin Man ; Ager, Joel W. / Reducing dislocation density by sequential implantation of Ge and in Si. Materials Research Society Symposium Proceedings. editor / M.A. Tischler ; R.T. Collins ; M.L.W. Thewalt ; G. Abstreiter. Publ by Materials Research Society, 1993. pp. 139-143 (Materials Research Society Symposium Proceedings).

@inproceedings{cc738297cbdf47479d5efbd52a428c71,

title = "Reducing dislocation density by sequential implantation of Ge and in Si",

abstract = "Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.",

author = "Seongil Im and Jack Washburn and Ronald Gronsky and Cheung, {Nathan W.} and Yu, {Kin Man} and Ager, {Joel W.}",

year = "1993",

language = "English",

isbn = "1558991948",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "139--143",

editor = "M.A. Tischler and R.T. Collins and M.L.W. Thewalt and G. Abstreiter",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",

}

Im, S, Washburn, J, Gronsky, R, Cheung, NW, Yu, KM & Ager, JW 1993, Reducing dislocation density by sequential implantation of Ge and in Si. in MA Tischler, RT Collins, MLW Thewalt & G Abstreiter (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 298, Publ by Materials Research Society, pp. 139-143, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 93/4/12.

Reducing dislocation density by sequential implantation of Ge and in Si. / Im, Seongil; Washburn, Jack; Gronsky, Ronald; Cheung, Nathan W.; Yu, Kin Man; Ager, Joel W.

Materials Research Society Symposium Proceedings. ed. / M.A. Tischler; R.T. Collins; M.L.W. Thewalt; G. Abstreiter. Publ by Materials Research Society, 1993. p. 139-143 (Materials Research Society Symposium Proceedings; Vol. 298).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Reducing dislocation density by sequential implantation of Ge and in Si

AU - Im, Seongil

AU - Washburn, Jack

AU - Gronsky, Ronald

AU - Cheung, Nathan W.

AU - Yu, Kin Man

AU - Ager, Joel W.

PY - 1993

Y1 - 1993

N2 - Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

AB - Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

UR - http://www.scopus.com/inward/record.url?scp=0027869537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027869537&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027869537

SN - 1558991948

T3 - Materials Research Society Symposium Proceedings

SP - 139

EP - 143

BT - Materials Research Society Symposium Proceedings

A2 - Tischler, M.A.

A2 - Collins, R.T.

A2 - Thewalt, M.L.W.

A2 - Abstreiter, G.

PB - Publ by Materials Research Society

T2 - Proceedings of the Symposium on Silicon-Based Optoelectronic Materials

Y2 - 12 April 1993 through 14 April 1993

ER -