@inproceedings{cc738297cbdf47479d5efbd52a428c71,
title = "Reducing dislocation density by sequential implantation of Ge and in Si",
abstract = "Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.",
author = "Seongil Im and Jack Washburn and Ronald Gronsky and Cheung, {Nathan W.} and Yu, {Kin Man} and Ager, {Joel W.}",
year = "1993",
language = "English",
isbn = "1558991948",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "139--143",
editor = "M.A. Tischler and R.T. Collins and M.L.W. Thewalt and G. Abstreiter",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",
}