Reducing dislocation density by sequential implantation of Ge and in Si

Seongil Im, Jack Washburn, Ronald Gronsky, Nathan W. Cheung, Kin Man Yu, Joel W. Ager

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
PublisherPubl by Materials Research Society
Pages139-143
Number of pages5
Volume298
ISBN (Print)1558991948
Publication statusPublished - 1993 Dec 1
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 14

Other

OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period93/4/1293/4/14

Fingerprint

Ion implantation
Annealing
Atoms
Nucleation
Carbon
Scattering
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Im, S., Washburn, J., Gronsky, R., Cheung, N. W., Yu, K. M., & Ager, J. W. (1993). Reducing dislocation density by sequential implantation of Ge and in Si. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (Vol. 298, pp. 139-143). Publ by Materials Research Society.
Im, Seongil ; Washburn, Jack ; Gronsky, Ronald ; Cheung, Nathan W. ; Yu, Kin Man ; Ager, Joel W. / Reducing dislocation density by sequential implantation of Ge and in Si. Materials Research Society Symposium Proceedings. editor / M.A. Tischler ; R.T. Collins ; M.L.W. Thewalt ; G. Abstreiter. Vol. 298 Publ by Materials Research Society, 1993. pp. 139-143
@inproceedings{cc738297cbdf47479d5efbd52a428c71,
title = "Reducing dislocation density by sequential implantation of Ge and in Si",
abstract = "Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at{\%}, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5{\%} to 6{\%} minimum back scattering yield as C atoms suppress the dislocation generation.",
author = "Seongil Im and Jack Washburn and Ronald Gronsky and Cheung, {Nathan W.} and Yu, {Kin Man} and Ager, {Joel W.}",
year = "1993",
month = "12",
day = "1",
language = "English",
isbn = "1558991948",
volume = "298",
pages = "139--143",
editor = "M.A. Tischler and R.T. Collins and M.L.W. Thewalt and G. Abstreiter",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

Im, S, Washburn, J, Gronsky, R, Cheung, NW, Yu, KM & Ager, JW 1993, Reducing dislocation density by sequential implantation of Ge and in Si. in MA Tischler, RT Collins, MLW Thewalt & G Abstreiter (eds), Materials Research Society Symposium Proceedings. vol. 298, Publ by Materials Research Society, pp. 139-143, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 93/4/12.

Reducing dislocation density by sequential implantation of Ge and in Si. / Im, Seongil; Washburn, Jack; Gronsky, Ronald; Cheung, Nathan W.; Yu, Kin Man; Ager, Joel W.

Materials Research Society Symposium Proceedings. ed. / M.A. Tischler; R.T. Collins; M.L.W. Thewalt; G. Abstreiter. Vol. 298 Publ by Materials Research Society, 1993. p. 139-143.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Reducing dislocation density by sequential implantation of Ge and in Si

AU - Im, Seongil

AU - Washburn, Jack

AU - Gronsky, Ronald

AU - Cheung, Nathan W.

AU - Yu, Kin Man

AU - Ager, Joel W.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

AB - Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

UR - http://www.scopus.com/inward/record.url?scp=0027869537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027869537&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027869537

SN - 1558991948

VL - 298

SP - 139

EP - 143

BT - Materials Research Society Symposium Proceedings

A2 - Tischler, M.A.

A2 - Collins, R.T.

A2 - Thewalt, M.L.W.

A2 - Abstreiter, G.

PB - Publ by Materials Research Society

ER -

Im S, Washburn J, Gronsky R, Cheung NW, Yu KM, Ager JW. Reducing dislocation density by sequential implantation of Ge and in Si. In Tischler MA, Collins RT, Thewalt MLW, Abstreiter G, editors, Materials Research Society Symposium Proceedings. Vol. 298. Publ by Materials Research Society. 1993. p. 139-143