Abstract
Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Editors | M.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter |
| Publisher | Publ by Materials Research Society |
| Pages | 139-143 |
| Number of pages | 5 |
| Volume | 298 |
| ISBN (Print) | 1558991948 |
| Publication status | Published - 1993 Dec 1 |
| Event | Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: 1993 Apr 12 → 1993 Apr 14 |
Other
| Other | Proceedings of the Symposium on Silicon-Based Optoelectronic Materials |
|---|---|
| City | San Francisco, CA, USA |
| Period | 93/4/12 → 93/4/14 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Cite this
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Reducing dislocation density by sequential implantation of Ge and in Si. / Im, Seongil; Washburn, Jack; Gronsky, Ronald; Cheung, Nathan W.; Yu, Kin Man; Ager, Joel W.
Materials Research Society Symposium Proceedings. ed. / M.A. Tischler; R.T. Collins; M.L.W. Thewalt; G. Abstreiter. Vol. 298 Publ by Materials Research Society, 1993. p. 139-143.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Reducing dislocation density by sequential implantation of Ge and in Si
AU - Im, Seongil
AU - Washburn, Jack
AU - Gronsky, Ronald
AU - Cheung, Nathan W.
AU - Yu, Kin Man
AU - Ager, Joel W.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.
AB - Carbon implantation was performed after high dose (5×1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial (SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Ge-induced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.
UR - http://www.scopus.com/inward/record.url?scp=0027869537&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027869537&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027869537
SN - 1558991948
VL - 298
SP - 139
EP - 143
BT - Materials Research Society Symposium Proceedings
A2 - Tischler, M.A.
A2 - Collins, R.T.
A2 - Thewalt, M.L.W.
A2 - Abstreiter, G.
PB - Publ by Materials Research Society
ER -