Reducing Rext in laser annealed enhancement-mode In 0.53Ga0.47as surface channel n-MOSFET

I. Ok, D. Veksler, P. Y. Hung, J. Oh, R. L. Moore, C. McDonough, R. E. Geer, C. K. Gaspe, M. B. Santos, G. Wong, P. Kirsch, H. H. Tseng, G. Bersuker, C. Hobbs, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


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Engineering & Materials Science