Reduction of contact resistance between Ni-InGaAs alloy and In0.53Ga0.47As using te interlayer

Meng Li, Geon Ho Shin, Hi Deok Lee, Dong Hwan Jun, Jungwoo Oh

Research output: Contribution to journalArticle

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Abstract

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type In0.53Ga0.47As layer, followed by in situ deposition of a 30-nmthick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at 300°C for 30 s, the extracted specific contact resistivity (ρc) reduced by more than one order of magnitude from 2.86 × 10-4 Ω·cm2 to 8.98 × 10-6 Ω·cm2 than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ρc reduction.

Original languageEnglish
Pages (from-to)253-256
Number of pages4
JournalTransactions on Electrical and Electronic Materials
Volume18
Issue number5
DOIs
Publication statusPublished - 2017 Oct 25

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Contact resistance
Rapid thermal annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Reduction of contact resistance between Ni-InGaAs alloy and In0.53Ga0.47As using te interlayer",
abstract = "A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type In0.53Ga0.47As layer, followed by in situ deposition of a 30-nmthick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at 300°C for 30 s, the extracted specific contact resistivity (ρc) reduced by more than one order of magnitude from 2.86 × 10-4 Ω·cm2 to 8.98 × 10-6 Ω·cm2 than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ρc reduction.",
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Reduction of contact resistance between Ni-InGaAs alloy and In0.53Ga0.47As using te interlayer. / Li, Meng; Shin, Geon Ho; Lee, Hi Deok; Jun, Dong Hwan; Oh, Jungwoo.

In: Transactions on Electrical and Electronic Materials, Vol. 18, No. 5, 25.10.2017, p. 253-256.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Li, Meng

AU - Shin, Geon Ho

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AB - A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type In0.53Ga0.47As layer, followed by in situ deposition of a 30-nmthick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at 300°C for 30 s, the extracted specific contact resistivity (ρc) reduced by more than one order of magnitude from 2.86 × 10-4 Ω·cm2 to 8.98 × 10-6 Ω·cm2 than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ρc reduction.

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