A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type In0.53Ga0.47As layer, followed by in situ deposition of a 30-nmthick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at 300°C for 30 s, the extracted specific contact resistivity (ρc) reduced by more than one order of magnitude from 2.86 × 10-4 Ω·cm2 to 8.98 × 10-6 Ω·cm2 than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ρc reduction.
|Number of pages||4|
|Journal||Transactions on Electrical and Electronic Materials|
|Publication status||Published - 2017 Oct 25|
Bibliographical noteFunding Information:
This research was supported by the Ministry of Trade, Industry & Energy (MOTIE) (10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This work was also supported in part by the research fund of Chungnam National University. The authors also thank Daegu Center of the Korea Basic Science Institute and National NanoFab Center for the technical support.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering