Abstract
A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.
| Original language | English |
|---|---|
| Article number | 041201 |
| Journal | Applied Physics Express |
| Volume | 10 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2017 Apr |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> interlayer'. Together they form a unique fingerprint.
Cite this
Li, M., Kim, J., Oh, J., & Lee, H. D. (2017). Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer. Applied Physics Express, 10(4), [041201]. https://doi.org/10.7567/APEX.10.041201