A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)