Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer

Meng Li; Jeyoung Kim; Jungwoo Oh; Hi Deok Lee

doi:10.7567/APEX.10.041201

Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge₂Sb₂Te₅ interlayer

Meng Li, Jeyoung Kim, Jungwoo Oh, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A method using a Ge₂Sb₂Te₅ (GST) interlayer is proposed for reducing the specific contact resistivity (ρ_c) between a self-aligned Ni-InGaAs alloy and the n-In_0.53Ga_0.47As substrate. Compared with a control sample, a substantially lower ρ_c was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρ_c was reduced by more than 2 orders of magnitude, from 3.1 × 10^-5 to 1.01 × 10^-7 Ω·cm², with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.

Original language	English
Article number	041201
Journal	Applied Physics Express
Volume	10
Issue number	4
DOIs	https://doi.org/10.7567/APEX.10.041201
Publication status	Published - 2017 Apr

Bibliographical note

Funding Information:
This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This research was also supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2015M3A7B7045563). The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analyses and the National NanoFab Center in Daejeon for the TEM and SIMS analyses.

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/APEX.10.041201

Fingerprint Dive into the research topics of 'Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer'. Together they form a unique fingerprint.

Cite this

@article{7b2d4af176c34b3ba90f2dd01c6995f8,

title = "Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer",

abstract = "A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.",

author = "Meng Li and Jeyoung Kim and Jungwoo Oh and Lee, {Hi Deok}",

note = "Funding Information: This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This research was also supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2015M3A7B7045563). The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analyses and the National NanoFab Center in Daejeon for the TEM and SIMS analyses.",

year = "2017",

month = apr,

doi = "10.7567/APEX.10.041201",

language = "English",

volume = "10",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer

AU - Li, Meng

AU - Kim, Jeyoung

AU - Oh, Jungwoo

AU - Lee, Hi Deok

N1 - Funding Information: This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This research was also supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2015M3A7B7045563). The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analyses and the National NanoFab Center in Daejeon for the TEM and SIMS analyses.

PY - 2017/4

Y1 - 2017/4

N2 - A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.

AB - A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.

UR - http://www.scopus.com/inward/record.url?scp=85016805697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85016805697&partnerID=8YFLogxK

U2 - 10.7567/APEX.10.041201

DO - 10.7567/APEX.10.041201

M3 - Article

AN - SCOPUS:85016805697

VL - 10

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 4

M1 - 041201

ER -