Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer

Meng Li, Jeyoung Kim, Jungwoo Oh, Hi Deok Lee

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1 Citation (Scopus)


A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.

Original languageEnglish
Article number041201
JournalApplied Physics Express
Issue number4
Publication statusPublished - 2017 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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