Abstract
A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.
| Original language | English |
|---|---|
| Article number | 041201 |
| Journal | Applied Physics Express |
| Volume | 10 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2017 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer. / Li, Meng; Kim, Jeyoung; Oh, Jungwoo; Lee, Hi Deok.
In: Applied Physics Express, Vol. 10, No. 4, 041201, 01.04.2017.Research output: Contribution to journal › Article
TY - JOUR
T1 - Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge2Sb2Te5 interlayer
AU - Li, Meng
AU - Kim, Jeyoung
AU - Oh, Jungwoo
AU - Lee, Hi Deok
PY - 2017/4/1
Y1 - 2017/4/1
N2 - A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.
AB - A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.
UR - http://www.scopus.com/inward/record.url?scp=85016805697&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85016805697&partnerID=8YFLogxK
U2 - 10.7567/APEX.10.041201
DO - 10.7567/APEX.10.041201
M3 - Article
AN - SCOPUS:85016805697
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 4
M1 - 041201
ER -