A method using a Ge2Sb2Te5 (GST) interlayer is proposed for reducing the specific contact resistivity (ρc) between a self-aligned Ni-InGaAs alloy and the n-In0.53Ga0.47As substrate. Compared with a control sample, a substantially lower ρc was obtained by applying the GST interlayer, followed by the in situ deposition of a Ni/TiN layer. ρc was reduced by more than 2 orders of magnitude, from 3.1 × 10-5 to 1.01 × 10-7 Ω·cm2, with the GST interlayer. The reduction in the contact resistance was due to the suppression of oxidation in the Ni-InGaAs alloy and at the interface between the Ni-InGaAs and n-InGaAs.
Bibliographical noteFunding Information:
This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This research was also supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2015M3A7B7045563). The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analyses and the National NanoFab Center in Daejeon for the TEM and SIMS analyses.
© 2017 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)