Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer

J. S. Lee, J. W. Kim, J. H. Lee, C. S. Kim, J. E. Oh, Moo Whan Shin, J. H. Lee

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Abstract

The structural growth of modified AlGaN/ GaN HFETs and the current collapse phenomenon in them were discussed. The structures were grown using the metallorganic chemical vapor deposition (MOCVD). The insertion of thin AlN interfacial layers was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier level.

Original languageEnglish
Pages (from-to)750-752
Number of pages3
JournalElectronics Letters
Volume39
Issue number9
DOIs
Publication statusPublished - 2003 May 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Lee, J. S., Kim, J. W., Lee, J. H., Kim, C. S., Oh, J. E., Shin, M. W., & Lee, J. H. (2003). Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer. Electronics Letters, 39(9), 750-752. https://doi.org/10.1049/el:20030473