The structural growth of modified AlGaN/ GaN HFETs and the current collapse phenomenon in them were discussed. The structures were grown using the metallorganic chemical vapor deposition (MOCVD). The insertion of thin AlN interfacial layers was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier level.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering