Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer

J. S. Lee, J. W. Kim, J. H. Lee, C. S. Kim, J. E. Oh, Moo Whan Shin, J. H. Lee

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The structural growth of modified AlGaN/ GaN HFETs and the current collapse phenomenon in them were discussed. The structures were grown using the metallorganic chemical vapor deposition (MOCVD). The insertion of thin AlN interfacial layers was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier level.

Original languageEnglish
Pages (from-to)750-752
Number of pages3
JournalElectronics Letters
Volume39
Issue number9
DOIs
Publication statusPublished - 2003 May 1

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Two dimensional electron gas
Metallorganic chemical vapor deposition
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lee, J. S., Kim, J. W., Lee, J. H., Kim, C. S., Oh, J. E., Shin, M. W., & Lee, J. H. (2003). Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer. Electronics Letters, 39(9), 750-752. https://doi.org/10.1049/el:20030473
Lee, J. S. ; Kim, J. W. ; Lee, J. H. ; Kim, C. S. ; Oh, J. E. ; Shin, Moo Whan ; Lee, J. H. / Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer. In: Electronics Letters. 2003 ; Vol. 39, No. 9. pp. 750-752.
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Lee, JS, Kim, JW, Lee, JH, Kim, CS, Oh, JE, Shin, MW & Lee, JH 2003, 'Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer', Electronics Letters, vol. 39, no. 9, pp. 750-752. https://doi.org/10.1049/el:20030473

Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer. / Lee, J. S.; Kim, J. W.; Lee, J. H.; Kim, C. S.; Oh, J. E.; Shin, Moo Whan; Lee, J. H.

In: Electronics Letters, Vol. 39, No. 9, 01.05.2003, p. 750-752.

Research output: Contribution to journalArticle

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