Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer

J. S. Lee; J. W. Kim; J. H. Lee; C. S. Kim; J. E. Oh; M. W. Shin; J. H. Lee

doi:10.1049/el:20030473

Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer

J. S. Lee, J. W. Kim, J. H. Lee, C. S. Kim, J. E. Oh, M. W. Shin, J. H. Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The structural growth of modified AlGaN/ GaN HFETs and the current collapse phenomenon in them were discussed. The structures were grown using the metallorganic chemical vapor deposition (MOCVD). The insertion of thin AlN interfacial layers was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier level.

Original language	English
Pages (from-to)	750-752
Number of pages	3
Journal	Electronics Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1049/el:20030473
Publication status	Published - 2003 May 1

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20030473

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title = "Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer",

abstract = "The structural growth of modified AlGaN/ GaN HFETs and the current collapse phenomenon in them were discussed. The structures were grown using the metallorganic chemical vapor deposition (MOCVD). The insertion of thin AlN interfacial layers was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier level.",

author = "Lee, {J. S.} and Kim, {J. W.} and Lee, {J. H.} and Kim, {C. S.} and Oh, {J. E.} and Shin, {M. W.} and Lee, {J. H.}",

year = "2003",

month = may,

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doi = "10.1049/el:20030473",

language = "English",

volume = "39",

pages = "750--752",

journal = "Electronics Letters",

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T1 - Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer

AU - Lee, J. S.

AU - Kim, J. W.

AU - Lee, J. H.

AU - Kim, C. S.

AU - Oh, J. E.

AU - Shin, M. W.

AU - Lee, J. H.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - The structural growth of modified AlGaN/ GaN HFETs and the current collapse phenomenon in them were discussed. The structures were grown using the metallorganic chemical vapor deposition (MOCVD). The insertion of thin AlN interfacial layers was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier level.

AB - The structural growth of modified AlGaN/ GaN HFETs and the current collapse phenomenon in them were discussed. The structures were grown using the metallorganic chemical vapor deposition (MOCVD). The insertion of thin AlN interfacial layers was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier level.

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U2 - 10.1049/el:20030473

DO - 10.1049/el:20030473

M3 - Article

AN - SCOPUS:0038057980

SN - 0013-5194

VL - 39

SP - 750

EP - 752

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer

Abstract

All Science Journal Classification (ASJC) codes

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