Reduction of electrical hysteresis in cyclically bent organic field effect transistors by incorporating multistack hybrid gate dielectrics

We have fabricated flexible organic field effect transistors (OFETs) on polyimide substrate with low hysteresis and low leakage current under repetitive bending. The insertion of an ultrathin atomic-layer-deposited Al₂ O₃ layer in between spin-coated poly-4-vinyl phenol organic layers in a multistack hybrid gate dielectric for OFETs significantly improved stability in the electrical hysteresis during cyclic bending. The observed hysteresis stability for cyclically bent multistack hybrid OFET devices was attributed to efficient blocking of charges injected from the gate electrode due to improved mechanical stability. Cyclically bent samples showed no cracking for thinner Al₂O₃ layers in the multistack hybrid gate dielectrics.