Reduction of electrical hysteresis in cyclically bent organic field effect transistors by incorporating multistack hybrid gate dielectrics

Y. G. Seol, J. S. Park, N. T. Tien, N. E. Lee, D. K. Lee, S. C. Lee, Y. J. Kim, C. S. Lee, H. Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have fabricated flexible organic field effect transistors (OFETs) on polyimide substrate with low hysteresis and low leakage current under repetitive bending. The insertion of an ultrathin atomic-layer-deposited Al2 O3 layer in between spin-coated poly-4-vinyl phenol organic layers in a multistack hybrid gate dielectric for OFETs significantly improved stability in the electrical hysteresis during cyclic bending. The observed hysteresis stability for cyclically bent multistack hybrid OFET devices was attributed to efficient blocking of charges injected from the gate electrode due to improved mechanical stability. Cyclically bent samples showed no cracking for thinner Al2O3 layers in the multistack hybrid gate dielectrics.

Original languageEnglish
Pages (from-to)H1046-H1050
JournalJournal of the Electrochemical Society
Volume157
Issue number11
DOIs
Publication statusPublished - 2010 Oct 13

Fingerprint

Organic field effect transistors
Gate dielectrics
Hysteresis
Mechanical stability
Phenol
Polyimides
Leakage currents
Phenols
Electrodes
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Seol, Y. G. ; Park, J. S. ; Tien, N. T. ; Lee, N. E. ; Lee, D. K. ; Lee, S. C. ; Kim, Y. J. ; Lee, C. S. ; Kim, H. / Reduction of electrical hysteresis in cyclically bent organic field effect transistors by incorporating multistack hybrid gate dielectrics. In: Journal of the Electrochemical Society. 2010 ; Vol. 157, No. 11. pp. H1046-H1050.
@article{577bf272f7af432c97d0405ab80b8436,
title = "Reduction of electrical hysteresis in cyclically bent organic field effect transistors by incorporating multistack hybrid gate dielectrics",
abstract = "We have fabricated flexible organic field effect transistors (OFETs) on polyimide substrate with low hysteresis and low leakage current under repetitive bending. The insertion of an ultrathin atomic-layer-deposited Al2 O3 layer in between spin-coated poly-4-vinyl phenol organic layers in a multistack hybrid gate dielectric for OFETs significantly improved stability in the electrical hysteresis during cyclic bending. The observed hysteresis stability for cyclically bent multistack hybrid OFET devices was attributed to efficient blocking of charges injected from the gate electrode due to improved mechanical stability. Cyclically bent samples showed no cracking for thinner Al2O3 layers in the multistack hybrid gate dielectrics.",
author = "Seol, {Y. G.} and Park, {J. S.} and Tien, {N. T.} and Lee, {N. E.} and Lee, {D. K.} and Lee, {S. C.} and Kim, {Y. J.} and Lee, {C. S.} and H. Kim",
year = "2010",
month = "10",
day = "13",
doi = "10.1149/1.3489944",
language = "English",
volume = "157",
pages = "H1046--H1050",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

Reduction of electrical hysteresis in cyclically bent organic field effect transistors by incorporating multistack hybrid gate dielectrics. / Seol, Y. G.; Park, J. S.; Tien, N. T.; Lee, N. E.; Lee, D. K.; Lee, S. C.; Kim, Y. J.; Lee, C. S.; Kim, H.

In: Journal of the Electrochemical Society, Vol. 157, No. 11, 13.10.2010, p. H1046-H1050.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reduction of electrical hysteresis in cyclically bent organic field effect transistors by incorporating multistack hybrid gate dielectrics

AU - Seol, Y. G.

AU - Park, J. S.

AU - Tien, N. T.

AU - Lee, N. E.

AU - Lee, D. K.

AU - Lee, S. C.

AU - Kim, Y. J.

AU - Lee, C. S.

AU - Kim, H.

PY - 2010/10/13

Y1 - 2010/10/13

N2 - We have fabricated flexible organic field effect transistors (OFETs) on polyimide substrate with low hysteresis and low leakage current under repetitive bending. The insertion of an ultrathin atomic-layer-deposited Al2 O3 layer in between spin-coated poly-4-vinyl phenol organic layers in a multistack hybrid gate dielectric for OFETs significantly improved stability in the electrical hysteresis during cyclic bending. The observed hysteresis stability for cyclically bent multistack hybrid OFET devices was attributed to efficient blocking of charges injected from the gate electrode due to improved mechanical stability. Cyclically bent samples showed no cracking for thinner Al2O3 layers in the multistack hybrid gate dielectrics.

AB - We have fabricated flexible organic field effect transistors (OFETs) on polyimide substrate with low hysteresis and low leakage current under repetitive bending. The insertion of an ultrathin atomic-layer-deposited Al2 O3 layer in between spin-coated poly-4-vinyl phenol organic layers in a multistack hybrid gate dielectric for OFETs significantly improved stability in the electrical hysteresis during cyclic bending. The observed hysteresis stability for cyclically bent multistack hybrid OFET devices was attributed to efficient blocking of charges injected from the gate electrode due to improved mechanical stability. Cyclically bent samples showed no cracking for thinner Al2O3 layers in the multistack hybrid gate dielectrics.

UR - http://www.scopus.com/inward/record.url?scp=77957693314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957693314&partnerID=8YFLogxK

U2 - 10.1149/1.3489944

DO - 10.1149/1.3489944

M3 - Article

AN - SCOPUS:77957693314

VL - 157

SP - H1046-H1050

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -