Reduction of ∙Si≡Si3 defect density at the Si/SiO2 interface by sol-gel SiO2 thin film passivation

Sehyun Oh, Seunghyo Lee, Eunseok Oh, Sangwoo Lim

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1 Citation (Scopus)

Abstract

The effect of SiO2 thin film passivation by sol-gel processes with various acid catalysts, ethanol (EtOH): tetraethyl orthosilicate (TEOS) volume ratios and baking temperatures on the carrier lifetime of the Si surface and Si/SiO2 interface properties was studied. SiO2 thin film passivation prepared by H2SO4 catalyst with a EtOH:TEOS volume ratio of 10:1 at a baking temperature of 50 °C greatly increased the carrier lifetime on the various Si wafers regardless of dopant type, wafer resistivity and crystal orientation. For example, the carrier lifetime increased from 28 to 316 μs before and after the sol-gel SiO2 passivation on the Si (100) surface with resistivity higher than 1000 Ω cm. It was confirmed that the increase of carrier lifetime resulted from the significant decrease in the defect density related to the ∙Si≡Si3 dangling bond at the Si/SiO2 interface. In the current study, proper sol-gel SiO2 film passivation increased the carrier lifetime on the Si surface by controlling the formation of ∙Si≡Si3 defects at the Si/SiO2 interface.

Original languageEnglish
Pages (from-to)134-140
Number of pages7
JournalThin Solid Films
Volume632
DOIs
Publication statusPublished - 2017 Jun 30

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program (NRF-2016R1D1A1B03936347) and the Priority Research Centers Program (2009-0093823) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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