Reduction of ∙Si≡Si3 defect density at the Si/SiO2 interface by sol-gel SiO2 thin film passivation

Sehyun Oh, Seunghyo Lee, Eunseok Oh, Sangwoo Lim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of SiO2 thin film passivation by sol-gel processes with various acid catalysts, ethanol (EtOH): tetraethyl orthosilicate (TEOS) volume ratios and baking temperatures on the carrier lifetime of the Si surface and Si/SiO2 interface properties was studied. SiO2 thin film passivation prepared by H2SO4 catalyst with a EtOH:TEOS volume ratio of 10:1 at a baking temperature of 50 °C greatly increased the carrier lifetime on the various Si wafers regardless of dopant type, wafer resistivity and crystal orientation. For example, the carrier lifetime increased from 28 to 316 μs before and after the sol-gel SiO2 passivation on the Si (100) surface with resistivity higher than 1000 Ω cm. It was confirmed that the increase of carrier lifetime resulted from the significant decrease in the defect density related to the ∙Si≡Si3 dangling bond at the Si/SiO2 interface. In the current study, proper sol-gel SiO2 film passivation increased the carrier lifetime on the Si surface by controlling the formation of ∙Si≡Si3 defects at the Si/SiO2 interface.

Original languageEnglish
Pages (from-to)134-140
Number of pages7
JournalThin Solid Films
Volume632
DOIs
Publication statusPublished - 2017 Jun 30

Fingerprint

Carrier lifetime
Defect density
carrier lifetime
Passivation
passivity
Sol-gels
gels
Thin films
defects
tetraethyl orthosilicate
thin films
baking
wafers
catalysts
Catalysts
electrical resistivity
Dangling bonds
sol-gel processes
Crystal orientation
Sol-gel process

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Reduction of ∙Si≡Si3 defect density at the Si/SiO2 interface by sol-gel SiO2 thin film passivation",
abstract = "The effect of SiO2 thin film passivation by sol-gel processes with various acid catalysts, ethanol (EtOH): tetraethyl orthosilicate (TEOS) volume ratios and baking temperatures on the carrier lifetime of the Si surface and Si/SiO2 interface properties was studied. SiO2 thin film passivation prepared by H2SO4 catalyst with a EtOH:TEOS volume ratio of 10:1 at a baking temperature of 50 °C greatly increased the carrier lifetime on the various Si wafers regardless of dopant type, wafer resistivity and crystal orientation. For example, the carrier lifetime increased from 28 to 316 μs before and after the sol-gel SiO2 passivation on the Si (100) surface with resistivity higher than 1000 Ω cm. It was confirmed that the increase of carrier lifetime resulted from the significant decrease in the defect density related to the ∙Si≡Si3 dangling bond at the Si/SiO2 interface. In the current study, proper sol-gel SiO2 film passivation increased the carrier lifetime on the Si surface by controlling the formation of ∙Si≡Si3 defects at the Si/SiO2 interface.",
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Reduction of ∙Si≡Si3 defect density at the Si/SiO2 interface by sol-gel SiO2 thin film passivation. / Oh, Sehyun; Lee, Seunghyo; Oh, Eunseok; Lim, Sangwoo.

In: Thin Solid Films, Vol. 632, 30.06.2017, p. 134-140.

Research output: Contribution to journalArticle

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T1 - Reduction of ∙Si≡Si3 defect density at the Si/SiO2 interface by sol-gel SiO2 thin film passivation

AU - Oh, Sehyun

AU - Lee, Seunghyo

AU - Oh, Eunseok

AU - Lim, Sangwoo

PY - 2017/6/30

Y1 - 2017/6/30

N2 - The effect of SiO2 thin film passivation by sol-gel processes with various acid catalysts, ethanol (EtOH): tetraethyl orthosilicate (TEOS) volume ratios and baking temperatures on the carrier lifetime of the Si surface and Si/SiO2 interface properties was studied. SiO2 thin film passivation prepared by H2SO4 catalyst with a EtOH:TEOS volume ratio of 10:1 at a baking temperature of 50 °C greatly increased the carrier lifetime on the various Si wafers regardless of dopant type, wafer resistivity and crystal orientation. For example, the carrier lifetime increased from 28 to 316 μs before and after the sol-gel SiO2 passivation on the Si (100) surface with resistivity higher than 1000 Ω cm. It was confirmed that the increase of carrier lifetime resulted from the significant decrease in the defect density related to the ∙Si≡Si3 dangling bond at the Si/SiO2 interface. In the current study, proper sol-gel SiO2 film passivation increased the carrier lifetime on the Si surface by controlling the formation of ∙Si≡Si3 defects at the Si/SiO2 interface.

AB - The effect of SiO2 thin film passivation by sol-gel processes with various acid catalysts, ethanol (EtOH): tetraethyl orthosilicate (TEOS) volume ratios and baking temperatures on the carrier lifetime of the Si surface and Si/SiO2 interface properties was studied. SiO2 thin film passivation prepared by H2SO4 catalyst with a EtOH:TEOS volume ratio of 10:1 at a baking temperature of 50 °C greatly increased the carrier lifetime on the various Si wafers regardless of dopant type, wafer resistivity and crystal orientation. For example, the carrier lifetime increased from 28 to 316 μs before and after the sol-gel SiO2 passivation on the Si (100) surface with resistivity higher than 1000 Ω cm. It was confirmed that the increase of carrier lifetime resulted from the significant decrease in the defect density related to the ∙Si≡Si3 dangling bond at the Si/SiO2 interface. In the current study, proper sol-gel SiO2 film passivation increased the carrier lifetime on the Si surface by controlling the formation of ∙Si≡Si3 defects at the Si/SiO2 interface.

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